Internal Voltage Generation Circuit Leakage Control
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Solution Overview
Problem
Semiconductor devices face issues with current leakage during the ramp-up period, which can lead to errors such as booting failures due to the generation of leakage currents from charge pump circuits when external voltages VDD and VPPEXT rise.
Innovation Solution
An internal voltage generation circuit that includes control signal generation units and a voltage generation unit performing charge pumping operations based on external voltages and an oscillation signal, while blocking current flow through the generation node, using NMOS transistors to prevent leakage by fixing voltages and controlling body voltages during the ramp-up period.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If charge pump circuits generate internal voltages using external power voltages VDD and VPPEXT, then internal voltage generation is achieved, but current leakage occurs during the ramp-up period causing booting failures
Solution Approach 1:
The patent applies preliminary action by generating the internal voltage VPP before the external power voltage VDD reaches its target level during the ramp-up period. The charge pump circuit is activated early to establish VPP, and control signals are used to block current leakage paths until VDD is stable, preventing booting failures caused by voltage instability.
Solution Approach 2:
The patent uses control signals as intermediaries to manage the charge pump operation. These control signals block current leakage from the charge pump circuit during critical ramp-up periods and enable selective activation of charge pump nodes, mediating between the external power voltage input and internal voltage generation to prevent booting failures.
2Use of energy by moving object
If external voltage levels are lowered to reduce power consumption, then power efficiency improves, but voltage stability during ramp-up deteriorates causing leakage current
Solution Approach 1:
The patent generates internal voltage VPP in advance before external voltage VDD reaches its final stable level. This preliminary voltage generation ensures that circuits requiring higher voltage can operate correctly even when external voltages are low and still ramping up, maintaining voltage stability without increasing final power consumption.
Solution Approach 2:
The patent changes the timing and level parameters of voltage generation by using control signals to activate charge pump nodes at specific moments during the ramp-up period. This allows the system to maintain adequate voltage levels during transition while keeping final steady-state power consumption low.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents current leakage and potential errors like booting failures by ensuring stable voltage generation and operation during the ramp-up period, maintaining accurate voltage levels and reducing power consumption.
Implementation Method 1
a voltage generation unit suitable for generating the internal voltage by performing a charge pumping operation based on the second external voltage and an oscillation signal
Implementation Method 2
blocking a current flowing through a generation node from which the internal voltage is generated, based on the first and second control signals
Data Source
AI summary
An internal voltage generation circuit includes a first control signal generation unit suitable for generating a first control signal activated to a level of a second external voltage when a first external voltage is activated, a second control signal generation unit suitable for generating a second control signal that equals the higher of the second external voltage and an internal voltage, and a voltage generation unit suitable for generating the internal voltage by performing a charge pumping operation based on the second external voltage and an oscillation signal while blocking a current flowing through a generation node from which the internal voltage is generated, based on the first and second control signals.