Internal Voltage Generation Circuit for Memory Write Recovery
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Solution Overview
Problem
In semiconductor memory devices, the internal voltages generated for core and boosted operations exhibit different temperature-dependent level changes, leading to potential write recovery time failures due to varying voltage differences.
Innovation Solution
An internal voltage generation device comprising a voltage detection circuit, a voltage difference detection circuit, a control circuit, and voltage generation circuits that adjust voltages based on detection signals to maintain a predetermined voltage difference between core and boosted voltages, ensuring stable operation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If internal voltages are generated independently without voltage difference control, then each voltage can be optimized for its specific function, but the voltage difference between core voltage and boosted voltage varies with temperature changes causing write recovery time failures
Solution Approach 1:
The patent implements feedback control by detecting the voltage difference between core voltage and boosted voltage, comparing it with a reference voltage, and adjusting the boosted voltage through a charge pump circuit based on the comparison result. This closed-loop feedback mechanism maintains a predetermined voltage difference regardless of temperature changes, preventing write recovery time failures while managing system complexity through targeted control.
Solution Approach 2:
The patent dynamically adjusts the boosted voltage parameter in response to temperature-induced voltage drift. By monitoring the voltage difference and modifying the boosted voltage level through the charge pump circuit, the system maintains optimal voltage relationships across varying operating conditions, ensuring reliable write recovery timing without requiring complete redesign of the voltage generation architecture.
2Reliability
If the boosted voltage level is increased to maintain voltage difference, then write recovery time reliability improves, but the risk of operation errors due to excessive voltage difference increases
Solution Approach 1:
The feedback control circuit continuously monitors the voltage difference between core voltage and boosted voltage, comparing it against a predetermined reference voltage. When the voltage difference deviates from the optimal range, the circuit automatically adjusts the boosted voltage level through the charge pump, preventing both insufficient voltage difference (which causes write recovery failures) and excessive voltage difference (which causes operation errors), thus maintaining reliability across varying conditions.
3Adaptability or versatility
If separate control circuits are used for core voltage and boosted voltage, then each voltage can be independently optimized, but the overall system complexity increases
Solution Approach 1:
The patent merges the control functions by having the voltage difference detection circuit and charge pump control integrated into the existing voltage generation architecture. The control circuit receives the detection signal from the voltage difference detection and directly controls the charge pump circuit, creating a unified control mechanism that manages both core voltage and boosted voltage relationships without requiring completely separate independent control systems, thus balancing adaptability with manageable complexity.
Data Source
AI summary
An internal voltage generation device includes: a voltage detection circuit generating a first detection signal by comparing a first voltage with a target voltage; a voltage difference detection circuit enabled in response to an operation enable signal, generating a second detection signal by comparing a voltage difference between the first voltage and a second voltage with a target gap voltage; a control circuit generating a first up/down code and the operation enable signal according to the first detection signal, and generating a second up/down code according to the second detection signal; a first voltage generation circuit generating the first voltage by down-converting a supply voltage, and adjusting a level of the first voltage according to the first up/down code; and a second voltage generation circuit generating the second voltage by boosting up the supply voltage, and adjusting a level of the second voltage according to the second up/down code.