Internal Voltage Generator Circuit for Semiconductor Memory

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Solution Overview

Problem

Semiconductor devices face challenges in generating internal voltages that vary with operation speed, leading to unstable power consumption and timing losses in circuits due to the difficulty in maintaining stable internal voltages as clock frequency changes.

Innovation Solution

An internal voltage generator circuit that adjusts voltage levels based on operation speed information, using differential amplifiers, drivers, and voltage dividers to generate internal voltages with varying division ratios, and includes negative and high voltage detectors and pumps to ensure adequate voltage levels are maintained.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional voltage generation circuits are used, then circuit simplicity is maintained, but internal voltage stability deteriorates when clock frequency changes

Engineering Contradiction:
Improveinternal voltage stabilityVSAvoidcircuit complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The voltage divider circuit dynamically adjusts its division ratio based on operation speed information. Different division ratios are selected according to different clock frequency ranges, allowing the internal voltage to remain stable across varying operating conditions. This dynamic adaptation resolves the contradiction by making the circuit responsive to operational requirements rather than fixed.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The invention changes the electrical parameter (voltage division ratio) based on operation speed. By selecting different division ratios corresponding to different clock frequency ranges, the system maintains stable internal voltage generation. This parameter change approach allows the circuit to adapt to varying operational demands without requiring complete circuit redesign.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If internal voltage levels are increased to maintain stability at high speeds, then timing reliability improves, but power consumption increases

Engineering Contradiction:
Improvetiming stabilityVSAvoidpower consumption
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The circuit dynamically adjusts internal voltage levels based on the current operation speed. At lower clock frequencies, lower voltage levels are sufficient, reducing power consumption. At higher frequencies, the circuit increases voltage levels to maintain timing stability. This dynamic adjustment resolves the contradiction by optimizing power consumption according to actual operational needs rather than maintaining maximum voltage continuously.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The invention changes the voltage level parameter according to operation speed information. Different voltage levels are applied for different clock frequency ranges, ensuring timing stability is maintained only when necessary. This selective parameter adjustment reduces overall power consumption while preserving reliability during critical high-speed operations.

Inventive Principle:
Principle #35Parameter changes

3Adaptability or versatility

If fixed voltage division ratios are used, then circuit complexity is reduced, but adaptability to different operation speeds deteriorates

Engineering Contradiction:
Improveoperation speed adaptabilityVSAvoidvoltage generator complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The voltage generator is segmented into multiple operation speed ranges, with each range having an optimized division ratio. The circuit divides the operational spectrum into distinct segments (e.g., first speed range with first division ratio, second speed range with second division ratio), allowing each segment to be optimized independently. This segmentation enables adaptability across different speeds while managing complexity through modular design.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The invention implements multiple division ratio parameters that are selected based on operation speed information. By having different division ratios for different speed ranges, the circuit achieves adaptability to various operational conditions. The parameter change approach allows the system to optimize performance for each speed range without requiring a completely different circuit for each condition.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution allows for stable operation by adjusting internal voltage levels in response to changes in operation speed, reducing power consumption and timing losses, and ensuring efficient operation across different clock frequencies.

Implementation Method 1

The band gap unit 110 generates a band gap voltage VGB with a predetermined level in response to a change in PVT (Process, Voltage and Temperature)

Methodology Applied
Scientific EffectBand gap voltage generation:

Implementation Method 2

The voltage divider 120 generates an internal voltage VREF using the band gap voltage VBG

Methodology Applied
Scientific EffectVoltage division:

Implementation Method 3

a differential amplifier configured to output a driver control signal through receiving a feed-back of internal voltage and a reference voltage

Methodology Applied
Scientific EffectDifferential amplification:

Implementation Method 4

a driver configured to drive an internal voltage in response to the driver control signal

Methodology Applied
Scientific EffectVoltage driving:

Implementation Method 5

a voltage divider configured to divide the internal voltage to generate the feed-back of internal voltage, a division ratio of the internal voltage depending on operation speed information of a semiconductor device

Methodology Applied
Scientific EffectVoltage division with variable ratio:

Implementation Method 6

a negative voltage detector configured to detect the level of a negative voltage to output an activated pump enable signal when the level of the negative voltage is not sufficiently low

Methodology Applied
Scientific EffectVoltage level detection:

Implementation Method 7

a negative voltage pump configured to generate the negative voltage in response to the pump enable signal

Methodology Applied
Scientific EffectNegative voltage pumping:

Implementation Method 8

a high voltage detector configured to detect the level of a high voltage to output an activated pump enable signal when the level of the high voltage is not sufficiently high

Methodology Applied
Scientific EffectVoltage level detection:

Implementation Method 9

a high voltage pump configured to generate the high voltage in response to the pump enable signal

Methodology Applied
Scientific EffectHigh voltage pumping:

Data Source

PatentUS8582386B2Internal voltage generator and semiconductor memory device including the same
Publication Date: 2013.11.12 MIMIRIP LLC
  • US8582386B2 patent drawing
  • US8582386B2 patent drawing
  • US8582386B2 patent drawing

AI summary

A semiconductor device including an internal voltage generator circuit that provides an internal voltage having a different level depending on the operation speed is provided. The semiconductor device includes an internal voltage generator circuit configured to receive operation speed information to generate an internal voltage having a different level depending on the operation speed; and an internal circuit operated using the internal voltage.