Internal Voltage Generator for Semiconductor Memory Stability
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Solution Overview
Problem
Conventional internal voltage supply systems in semiconductor devices experience unstable voltage levels, leading to unreliable data storage and logic level discrimination due to the unstable nature of internal voltages VCP and VBLP, which are critical for data transfer and storage.
Innovation Solution
The proposed solution involves a multi-unit internal voltage generation apparatus where a first internal voltage generating unit supplies a voltage corresponding to a reference voltage, a second unit generates a voltage half of the normal voltage, and a third unit uses the second internal voltage as a power source to maintain stable internal voltages VCP and VBLP, even if the normal voltage is unstable, by employing a driving control unit and a driving unit with distinct power sources to produce stable pull-up and pull-down control signals.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional internal voltage supply systems are used, then the device complexity is reduced, but the voltage stability deteriorates leading to unreliable data storage and logic level discrimination
Solution Approach 1:
The internal voltage supply system is divided into three separate voltage generating units (10, 20, 30), each responsible for generating a specific internal voltage (VCORE, VCP, VBLP) with dedicated reference voltages. This segmentation isolates voltage generation paths, preventing instability propagation and improving overall voltage stability without significantly increasing device complexity.
Solution Approach 2:
Stable reference voltages (VREFC, VREFP, VREFBLP) are introduced as intermediary elements that mediate between the power supply and the internal voltage generating units. These reference voltages serve as stable benchmarks that guide the voltage generation process, ensuring reliable output voltages even when input power fluctuates.
2Reliability
If internal voltages VCP and VBLP are derived from normal voltage VCORE, then the device complexity is minimized, but the data reliability deteriorates due to unstable voltage levels
Solution Approach 1:
The voltage generation system is segmented into independent units with dedicated reference voltages. Each unit (VCORE generating unit 10, VCP generating unit 20, VBLP generating unit 30) operates independently with its own reference voltage, preventing instability in one unit from affecting others and ensuring reliable data storage and logic level discrimination.
Solution Approach 2:
Each voltage generating unit is equipped with a dedicated reference voltage tailored to its specific function. The VCORE unit uses VREFC, the VCP unit uses VREFP, and the VBLP unit uses VREFBLP. This local quality approach ensures that each unit receives the optimal reference voltage for its specific purpose, improving data reliability.
3Reliability
If a single power source is used for all internal voltage generating units, then the ease of operation is improved, but the voltage stability deteriorates when the normal voltage fluctuates
Solution Approach 1:
The power supply system is segmented into multiple independent power sources. The VCORE generating unit receives power from one source, while the VCP and VBLP generating units receive power from another source. This segmentation isolates voltage fluctuations to specific units, preventing system-wide instability while maintaining operational simplicity through integrated control.
Data Source
AI summary
An internal voltage generator stably supplies an internal voltage in a semiconductor device. The internal voltage generator includes: a first internal voltage generating means for supplying a first internal voltage which has a level corresponding to a first reference voltage using an external voltage; a second internal voltage generating means for supplying a second internal voltage which has a level corresponding to a second reference voltage using the external voltage; and a third internal voltage generating means for supplying a third internal voltage which has a level corresponding to a third reference voltage generated based on the first internal voltage, using the second internal voltage as a power source.