Interposer RDL Packaging for Dense I/O and Electrical Performance

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

The increasing complexity and miniaturization of semiconductor devices pose challenges in processing and manufacturing, particularly in reducing the package size and maintaining electrical performance while accommodating the ever-increasing number of input/output connections.

Innovation Solution

The integration of through-silicon vias (TSVs) and redistribution layers (RDLs) in a fan-out wafer level package, along with conductive vias and interposer dies, allows for reduced pitch and improved electrical performance, and the use of testing structures for verification and yield enhancement.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If through-silicon vias (TSVs) and redistribution layers (RDLs) are integrated in a fan-out wafer level package, then electrical performance is improved and pitch is reduced, but device complexity increases

Engineering Contradiction:
Improveelectrical performanceVSAvoidpackage structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent implements fan-out wafer level packaging by routing signals laterally through redistribution layers (RDLs) on the package substrate rather than directly vertically through TSVs. This dimensional change in signal routing allows multiple I/O connections to be distributed across a larger area, reducing pitch while maintaining electrical performance and managing complexity through spatial distribution.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The package substrate with RDLs serves as an intermediary between the semiconductor die and the external environment. The RDLs redistribute signals from TSV landing pads to external contact pads, acting as a mediator that decouples the complex TSV structure from the external I/O connections, thereby improving electrical performance while managing overall package complexity.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Productivity

If the number of input/output connections is increased, then functional density is improved, but package size reduction becomes more difficult

Engineering Contradiction:
Improvefunctional densityVSAvoidpackage size
Core Design Contradiction:
ProductivityVSArea of stationary object

Solution Approach 1:

The fan-out packaging architecture utilizes the planar dimension of the package substrate to distribute multiple I/O connections through RDLs. By routing signals laterally across the substrate surface rather than concentrating them vertically, the package can accommodate increased functional density while maintaining a compact overall size through efficient spatial utilization.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The package substrate is segmented into multiple RDL layers and regions, each handling specific signal routing functions. This segmentation allows high-density I/O connections to be organized and distributed across different areas and layers of the substrate, increasing functional density while managing the physical package size through systematic spatial distribution.

Inventive Principle:
Principle #1Segmentation

3Length of moving object

If geometric size is decreased, then miniaturization is achieved, but manufacturing complexity increases

Engineering Contradiction:
Improvegeometric sizeVSAvoidprocessing complexity
Core Design Contradiction:
Length of moving objectVSDevice complexity

Solution Approach 1:

The TSVs and RDLs are formed on the package substrate before the semiconductor die is mounted. This preliminary structuring of the packaging substrate allows for optimized signal routing and electrical performance to be established in advance, enabling miniaturization while managing manufacturing complexity through pre-fabricated interconnect structures that can be produced using standard semiconductor fabrication processes.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS20260076227A1Semiconductor structure and manufacturing method thereof
Publication Date: 2026.03.12 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20260076227A1 patent drawing
  • US20260076227A1 patent drawing
  • US20260076227A1 patent drawing

AI summary

A method includes: forming an interposer die using a substrate, the interposer die including a plurality of conductive vias in the substrate; bonding the interposer die to a first redistribution layer (RDL); encapsulating the interposer die; forming a second RDL over the interposer die on a side opposite to the first RDL; bonding a first semiconductor die with one of the first RDL and the second RDL; and encapsulating the first semiconductor die.