Interposer Package With Recessed Through Electrodes
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Solution Overview
Problem
Current semiconductor packaging technologies face challenges in creating compact, thin, and efficient interposer-based semiconductor packages that effectively protect semiconductor dies while maintaining electrical connectivity, especially as electronic devices continue to shrink in size.
Innovation Solution
The method involves forming via holes in an interposer wafer, creating interconnection structures with through electrode portions, external connection portions, and extension portions, and recessing the wafer to expose the through electrode ends, allowing for direct mounting of semiconductor dies and a protective layer, thereby reducing package thickness and enhancing electrical connectivity without additional interconnections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If the interposer wafer thickness is reduced to create thinner semiconductor packages, then the package thickness is improved, but the electrical connectivity and structural integrity may deteriorate
Solution Approach 1:
The through electrode portions are nested within the interposer wafer body, extending from the first surface through the recessed second surface. This nested configuration allows the interconnection structures to be embedded within the reduced-thickness wafer while maintaining complete electrical connectivity from one surface to the other, resolving the contradiction between reduced thickness and maintained connectivity.
Solution Approach 2:
The interconnection structures extend in the vertical dimension through the recessed wafer, with through electrode portions penetrating the wafer body and extension portions providing lateral connectivity. This dimensional approach allows the package thickness to be reduced while electrical pathways are maintained through the vertical extension of conductive structures.
2Length of moving object
If the interposer wafer is recessed to expose through electrode ends for direct die mounting, then the package thickness is reduced, but the manufacturing complexity increases
Solution Approach 1:
The via holes are formed and through electrode portions are deposited in the interposer wafer before the recessing step. This preliminary formation of interconnection structures allows the subsequent recessing to simply expose the pre-formed through electrode ends, simplifying the overall manufacturing process while achieving the thin package goal.
Solution Approach 2:
The interconnection structures are segmented into distinct portions: through electrode portions within the wafer body, extension portions on the first surface, and external connection portions. This segmentation allows each portion to be optimized and formed separately through targeted processing steps, making the complex structure manufacturable.
3Reliability
If through electrode portions are formed to extend through the recessed wafer, then electrical connectivity is improved, but the manufacturing precision requirements increase
Solution Approach 1:
The via hole formation and through electrode portion deposition are merged into a sequential process where the via holes are formed first, then the through electrode portions are deposited to fill them. This merging of steps ensures that the conductive structures are precisely positioned within the via holes, achieving both high electrical connectivity and manageable manufacturing precision requirements.
Data Source
AI summary
A semiconductor package may include a semiconductor die mounted on a first surface of an interposer die so that a die connection portion of the semiconductor die faces to the first surface of the interposer die, a protection portion may be disposed on the first surface of the interposer die to cover the semiconductor die, and an interconnection structure disposed in and on the interposer die. The interconnection structure may include an external connection portion that is located on a second surface of the interposer die opposite to the semiconductor die, a through electrode portion that penetrates the interposer die to have an end portion combined with the die connection portion, and an extension portion that connects the through electrode portion to the external connection portion. Related methods are also provided.