Interposer-Based Semiconductor Package for High-Bandwidth 3D Integration
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Solution Overview
Problem
Current semiconductor packages face challenges in efficiently connecting multiple semiconductor chips with high bandwidth requirements, particularly in high-performance computing systems, due to bottlenecks in memory devices and the need for increased interconnection lines in limited areas.
Innovation Solution
The semiconductor package design incorporates an interposer with fine-pitch interconnection lines and through electrodes (TSVs) to connect a microprocessor chip with memory chips, allowing for increased signal lines and improved signal integration, and uses conductive coupling members to link the interposer between the chips and a package substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple semiconductor chips are connected using conventional packaging methods, then the number of interconnection lines is limited, but the bandwidth and signal transmission speed deteriorate due to bottlenecks in memory devices and limited interconnection capacity
Solution Approach 1:
The patent transitions from conventional 2D planar interconnection to 3D vertical interconnection by stacking semiconductor chips and memory devices in multiple layers. Through-electrode vias penetrate through chip layers to establish vertical signal paths, enabling high-density interconnection in the depth dimension. This dimensional transition allows significantly increased interconnection capacity and bandwidth without expanding the footprint area.
Solution Approach 2:
The patent introduces an interposer substrate as an intermediary component between the microprocessor chip and memory chips. The interposer provides a platform with fine-pitch interconnection lines and through-electrode vias that mediate the connection between chips, enabling high-bandwidth communication while managing signal integrity and electrical characteristics through controlled impedance pathways.
2Quantity of substance
If the number of interconnection lines is increased in a limited area, then the bandwidth is improved, but the signal path length and interference increase causing signal transmission quality to deteriorate
Solution Approach 1:
By moving interconnections to the vertical dimension through stacked layers and through-electrode vias, the patent reduces lateral signal path lengths and minimizes crosstalk between adjacent lines. The vertical stacking allows dense interconnection without the signal interference problems that arise from crowded planar layouts.
Solution Approach 2:
The interposer substrate acts as a mediator that provides controlled-impedance transmission pathways and shielding structures. It manages signal integrity by controlling electromagnetic fields, reducing reflections and crosstalk, and providing stable electrical characteristics for high-speed signals throughout the interconnection network.
3Device complexity
If conventional packaging methods are used to connect semiconductor chips, then the structure is simple, but the signal transmission speed and integration density deteriorate due to bottlenecks in memory devices
Solution Approach 1:
The patent employs 3D stacking architecture where chips and memory devices are vertically arranged and connected through-electrode vias. This vertical integration dramatically reduces signal path lengths compared to conventional lateral connections, enabling faster signal transmission and higher operating frequencies despite the increased structural complexity.
Solution Approach 2:
The interposer substrate serves as a sophisticated intermediary that provides high-speed transmission pathways with controlled impedance matching. It includes features such as embedded passive components, shielding structures, and precision alignment mechanisms that enable fast signal transmission while managing the complexity of multi-chip interconnections.
Data Source
AI summary
A semiconductor package may include a first semiconductor chip, second semiconductor chips disposed to respectively overlap with portions of the first semiconductor chip, a interposer disposed to overlap with a portion of the first semiconductor chip, and a package substrate disposed on backside surfaces of the second semiconductor chips opposite to the first semiconductor chip. The interposer may be disposed between the first semiconductor chip and the package substrate. First conductive coupling members connect the first semiconductor chip to the second semiconductor chips. Second conductive coupling members connect the first semiconductor chip to the interposer. Third conductive coupling members connect the interposer to the package substrate.