Semiconductor Interposer Integration with Standoff Cavities
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Solution Overview
Problem
Current semiconductor packaging technologies face challenges in miniaturization, increased transistor density, and cost reduction, with existing methods like Multi-Chip-Module and Package-on-Package architectures experiencing mechanical stresses and limited electrical connections, which hinder performance and reliability.
Innovation Solution
The development of semiconductor packages with interposers featuring cavities and standoff interposers to increase electronic component density, reduce footprint, and enhance cooling, utilizing through-substrate vias and redistribution layers for high-density and secure packaging configurations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If 2D monolithic dies are integrated on an organic substrate assembled on a PCB, then electrical connections between dies and substrate can be established, but mechanical stresses increase and yield decreases due to substrate size
Solution Approach 1:
The patent transitions from 2D integration on a large organic substrate to 3D integration using a silicon interposer with through-substrate vias. Multiple dies are stacked vertically and connected through the interposer, reducing the lateral substrate area and minimizing mechanical stresses while maintaining high electrical connectivity.
2Length of stationary object
If Package-on-Package architecture with vertical stacking is used, then profile is lowered and clearance is provided, but the number of electrical connections between substrates is reduced
Solution Approach 1:
The patent implements a nested structure where multiple dies and interposers are stacked vertically. Each interposer contains through-substrate vias that pass through the entire thickness, allowing electrical connections to be routed through intermediate layers. This nested arrangement maintains a low profile while preserving high-density electrical connectivity through the vertical stack.
3Quantity of substance
If through-substrate vias and standoff interposers are used to create clearance, then electronic component density increases and cooling is enhanced, but device complexity increases
Solution Approach 1:
The patent segments the packaging structure into modular units: silicon interposers, standoff interposers, and electronic components. Each interposer is a discrete element with specific functions (electrical routing, mechanical support, clearance creation). This segmentation allows for standardized manufacturing and assembly, reducing overall complexity despite the three-dimensional configuration.
4Manufacturing precision
If silicon interposers with through-substrate vias are used instead of organic substrates, then manufacturing precision and electrical connections are improved, but cost per transistor increases
Solution Approach 1:
The patent merges multiple functions into the silicon interposer: electrical routing through through-substrate vias, mechanical support for stacked dies, thermal management pathways, and precise alignment features. This consolidation eliminates the need for separate organic substrates and reduces assembly steps, offsetting the higher material cost with manufacturing efficiency and improved yield.
Data Source
AI summary
An electronic package comprising a first substrate that includes a first plurality of substrate vias and one or more cavities, a second substrate that includes a second plurality of substrate vias and one or more cavities, and a standoff substrate(s). The standoff substrate(s)positioned between the first and second substrate, the standoff substrate(s) is affixed to each of the first and second substrate, standoff substrate(s) forms a clearance between the first and second substrate, the standoff substrate(s) comprises an intervening plurality of substrate vias passing through the entire thickness of the standoff substrate(s), and a portion of the second plurality of substrate vias are configured to be or capable of being electrically connected to a portion of the first plurality of substrate vias by way of a portion of the intervening plurality of substrate vias.