I/O Interface Cell Layout for Selectable ESD and Drive Performance
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Solution Overview
Problem
The performance and power consumption of stacked semiconductor devices, particularly 3D-ICs, are not optimal due to the limitations of existing ESD devices in their input/output (I/O) interface cells, which hinder dynamic adjustment of ESD performance and driving performance, leading to increased manufacturing time and costs.
Innovation Solution
The semiconductor device incorporates multiple ESD diode arrangements and drivers with through silicon via (TSV) connections, allowing for dynamic selection of ESD and driving performance by varying the connection configurations through wiring and via patterns, enabling flexible optimization of I/O interface cells.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If ESD devices are included in I/O interface cells of 3D-ICs, then electrostatic discharge protection is improved, but performance and power consumption become non-optimal
Solution Approach 1:
The patent implements dynamic ESD protection by providing multiple ESD diode arrangements (first ESD diode arrangement and second ESD diode arrangement) that can be selectively activated. The system dynamically switches between different ESD protection configurations based on operational requirements, allowing the ESD protection level to be adjusted without permanently compromising performance or power consumption. This resolves the contradiction by making ESD protection adaptive rather than static.
Solution Approach 2:
The patent applies local quality by providing different ESD protection configurations for different I/O interface cells. Each I/O interface cell can be equipped with appropriate ESD diode arrangements based on its specific requirements. The first ESD diode arrangement and second ESD diode arrangement can be selectively activated in different regions, allowing optimal balance between protection and performance for each local area rather than uniform protection across the entire device.
2Reliability
If ESD devices are included in I/O interface cells of 3D-ICs, then electrostatic discharge protection is improved, but driving performance becomes non-optimal
Solution Approach 1:
The system dynamically adjusts ESD protection levels by selectively activating different ESD diode arrangements based on driving performance requirements. When high driving performance is needed, the system can minimize ESD protection activation. When protection is critical, the system activates appropriate ESD diode arrangements. This dynamic adjustment resolves the contradiction between protection and performance.
Solution Approach 2:
The patent segments ESD protection into multiple independent ESD diode arrangements (first ESD diode arrangement, second ESD diode arrangement) that can be independently controlled. This segmentation allows selective activation of specific ESD protection circuits without affecting the entire I/O interface, enabling fine-grained balance between protection and driving performance.
3Adaptability or versatility
If multiple ESD diode arrangements with different connection configurations are provided, then adaptability of I/O interface cells is improved, but device complexity increases
Solution Approach 1:
The patent implements multi-functionality by designing ESD diode arrangements that can serve multiple purposes. The same ESD diode structures (first ESD diode arrangement, second ESD diode arrangement) can be selectively activated for different ESD protection levels and different driving performance requirements. This universal design allows a single set of ESD structures to fulfill multiple functions, reducing the need for entirely separate circuits for each configuration.
Solution Approach 2:
The patent merges multiple ESD protection functions into unified ESD diode arrangements. Rather than providing completely separate ESD protection circuits for each protection level, the system combines multiple protection capabilities into integrated ESD diode arrangements that can be selectively activated. This merging reduces overall device complexity while maintaining adaptability.
4Manufacturing precision
If custom wiring patterns and via patterns are manufactured for each I/O interface cell configuration, then manufacturing precision is improved, but manufacturing time and costs increase
Solution Approach 1:
The patent applies preliminary action by pre-configuring multiple ESD diode arrangements and their connection paths during the initial manufacturing process. The first ESD diode arrangement, second ESD diode arrangement, and their various connection configurations to drivers and TSVs are all prepared in advance. This preliminary configuration allows selective activation of different patterns without requiring custom manufacturing for each configuration, thus maintaining precision while reducing manufacturing time and costs.
Solution Approach 2:
The system enables dynamic selection of wiring and via patterns through selective activation rather than physical reconfiguration. The pre-manufactured multiple connection configurations can be dynamically switched between different patterns based on requirements, eliminating the need to manufacture custom wiring patterns for each configuration. This dynamic selection maintains manufacturing precision while significantly improving productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the utilization of I/O interface cells by allowing for various ESD and driving performances to be selected, reducing manufacturing time and costs while optimizing performance and power consumption.
Implementation Method 1
a plurality of first electrostatic discharge (ESD) diode arrangements, a first driver and a first through silicon via (TSV) disposed therein
Implementation Method 2
first ESD diode arrangements... second ESD diode arrangements
Data Source
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AI summary
A semiconductor device includes: a first I/O interface cell region having a plurality of first electrostatic discharge (ESD) diode arrangements, a first driver and a first through silicon via (TSV) disposed therein and having first wiring patterns and first via patterns for electrically connecting the plurality of first ESD diode arrangements, the first driver and the first TSV; and a second I/O interface cell region having a plurality of second ESD diode arrangements, a second driver and a second TSV disposed therein and having second wiring patterns and second via patterns for electrically connecting the second driver, the second TSV and a subset of the plurality of second ESD diode arrangements, wherein the second ESD diode arrangements other than the subset are separated from the second driver and the second TSV