I/O Pad Cluster Layout for Higher Pin Count and Latch-Up Control

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Conventional integrated circuit designs face challenges in increasing pin count while minimizing electrostatic discharge and latch up risks, particularly as die sizes reduce, leading to space constraints and formation of unwanted parasitic structures.

Innovation Solution

The method involves clustering I/O pads with like active components adjacent to each other, positioning them near inactive areas on the die, and using guard rings or shielding devices to reduce spacing, thereby minimizing electrostatic discharge and latch up risks.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If pads are placed close together to increase pin count, then the quantity of I/O pads increases, but the risk of electrostatic discharge and latch up increases

Engineering Contradiction:
Improvepin countVSAvoidelectrostatic discharge and latch up risk
Core Design Contradiction:
Quantity of substanceVSObject-affected harmful factors

Solution Approach 1:

The patent applies local quality by differentiating the spacing requirements between like transistors versus opposite type transistors. Like transistors (same type) can be placed adjacent to each other without increased latch-up risk, while opposite type transistors require spacing. This localized differentiation of spacing rules enables denser pad placement while maintaining reliability.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes the parameter of transistor spacing based on transistor type compatibility. By modifying the spacing parameter dynamically - zero spacing for like transistors, non-zero spacing for opposite type transistors - the design achieves maximum pin count while controlling electrostatic discharge and latch-up risks through parameter optimization.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If pads are spaced apart to reduce electrostatic damage and latch up, then reliability improves, but the utilization of die area decreases

Engineering Contradiction:
Improveelectrostatic discharge and latch up preventionVSAvoiddie area utilization
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent applies local quality by differentiating the spacing requirements between like transistors versus opposite type transistors. Like transistors (same type) can be placed adjacent to each other without increased latch-up risk, while opposite type transistors require spacing. This localized differentiation of spacing rules enables denser pad placement while maintaining reliability.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes the parameter of transistor spacing based on transistor type compatibility. By modifying the spacing parameter dynamically - zero spacing for like transistors, non-zero spacing for opposite type transistors - the design achieves maximum pin count while controlling electrostatic discharge and latch-up risks through parameter optimization.

Inventive Principle:
Principle #35Parameter changes

3Area of stationary object

If pads are placed in the core area to utilize available die space, then die area utilization improves, but routing congestion and space between components decreases

Engineering Contradiction:
Improvedie area utilizationVSAvoidrouting congestion
Core Design Contradiction:
Area of stationary objectVSDevice complexity

Solution Approach 1:

The patent segments the die into multiple I/O clusters, each containing pads of the same type (all input pads or all output pads). This segmentation allows independent routing of input and output signals, reducing routing congestion by organizing pads into functional groups that can be routed separately through the core area.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent changes the parameter of transistor spacing based on transistor type compatibility. By modifying the spacing parameter dynamically - zero spacing for like transistors, non-zero spacing for opposite type transistors - the design achieves maximum pin count while controlling electrostatic discharge and latch-up risks through parameter optimization.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentEP3961709B1Integrated circuit die with an input/output cluster
Publication Date: 2026.04.15 QUALCOMM INC
  • EP3961709B1 patent drawingFigure 1
  • EP3961709B1 patent drawingFigure 2
  • EP3961709B1 patent drawingFigure 3

AI summary

A first I/O pad has a first type transistor disposed at a first end of the first I/O pad. A second I/O pad has another first type transistor disposed at a first end of the second I/O pad. The first end of the first I/O pad abuts the first end of the second I/O pad, so the first type transistor is adjacent to the other first type transistor.