Ion Beam Dimension Control for Implantation Non-Uniformities
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Solution Overview
Problem
In semiconductor manufacturing, achieving uniformity in processing operations across increasing substrate sizes and decreasing feature sizes is challenging, leading to non-uniformities that result in non-functional chips due to variations in film thickness and critical dimension measurements.
Innovation Solution
The method involves varying the scan speed and size of an ion beam across a semiconductor substrate in both x and y directions, focusing the dopant concentration at specific locations to compensate for non-uniformities by adjusting the position and dimensions of the ion beam, allowing for customized dopant implantation profiles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If substrate size is increased to improve productivity, then manufacturing output increases, but uniformity of processing operations deteriorates
Solution Approach 1:
The patent applies local quality by varying the ion beam parameters (current, energy, scan speed) across different regions of the substrate. The system measures local non-uniformities and adjusts implantation conditions locally to compensate, ensuring each region receives appropriate doping levels despite the large substrate size.
Solution Approach 2:
The patent implements dynamics by making the ion beam parameters adjustable and variable during the implantation process. The system dynamically changes beam current, energy, and scan speed based on real-time measurements of substrate non-uniformities, allowing adaptation to different substrate sizes and configurations.
2Quantity of substance
If feature size is decreased to improve device density, then substrate capacity increases, but control of processing uniformity deteriorates
Solution Approach 1:
The patent employs feedback by measuring the actual non-uniformities in the substrate (through film thickness or critical dimension measurements) and using this information to adjust subsequent ion implantation parameters. This closed-loop control compensates for variations and maintains precision even as feature sizes decrease.
Solution Approach 2:
The system applies local quality by tailoring ion implantation parameters to specific regions of the substrate. Each region receives customized beam conditions based on its local characteristics, ensuring uniform device performance across the entire substrate despite varying feature sizes.
3Manufacturing precision
If ion beam area is reduced to improve dopant concentration control, then manufacturing precision improves, but productivity decreases
Solution Approach 1:
The patent applies dynamics by making the ion beam area variable rather than fixed. The system dynamically adjusts beam width and scan speed to optimize the balance between concentration control and throughput. Faster scan speeds can compensate for smaller beam areas, maintaining productivity while achieving precise dopant placement.
Solution Approach 2:
The system uses parameter changes by varying multiple ion beam parameters simultaneously (current, energy, scan speed, beam width) to achieve the desired dopant concentration profile. This multi-parameter optimization allows maintaining high productivity while achieving precise control through coordinated adjustments.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This advanced process control technique ensures functional semiconductor devices by effectively addressing non-uniformities across the substrate, enhancing the production of high-quality chips by varying the implant dosage and concentration.
Implementation Method 1
ion implantation process and apparatus
Data Source
AI summary
A process control method is provided for ion implantation methods and apparatuses, to produce a high dosage area on a substrate such as may compensate for noted non-uniformities. In an ion implantation tool, separately controllable electrodes are provided as multiple sets of opposed electrodes disposed outside an ion beam. Beam blockers are positionable into the ion beam. Both the electrodes and beam blockers are controllable to reduce the area of the ion beam that is incident upon a substrate. The electrodes and beam blockers also change the position of the reduced-area ion beam incident upon the surface. The speed at which the substrate scans past the ion beam may be dynamically changed during the implantation process to produce various dosage concentrations in the substrate.