Ion Beam Microstructure Fabrication Timing Control
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Solution Overview
Problem
Existing microstructure manufacturing technologies, such as those using focused ion beam apparatuses, face challenges in avoiding ion beam radiation at positions other than the desired processing location, leading to unintended processing in areas outside the set area, which can result in defects like short circuits between adjacent electrodes.
Innovation Solution
A microstructure manufacturing method and apparatus that control the timing and direction of ion beam radiation and gas supply to prevent unintended radiation, where the ion beam is stopped or started before/after gas supply, and the beam direction is alternately controlled during blanking operations to minimize unwanted processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the timing of blanking is merely switched for each kind of gas using the technology of PTL 1, then the voltage application timing can be adjusted per gas type, but ion beam radiation at positions other than the desired processing position cannot be avoided
Solution Approach 1:
The patent applies preliminary action by stopping the ion beam radiation before stopping the gas supply, and starting the gas supply before starting the ion beam radiation. This sequencing ensures that the gas is already present in the processing area when the ion beam is activated, and the gas supply is maintained until the ion beam is completely stopped, preventing unintended processing at positions other than the desired processing position.
Solution Approach 2:
The patent uses the gas supply as an intermediary to control the effective processing region. By maintaining gas supply during the transition periods of ion beam start/stop, the gas acts as a mediator that defines the boundaries of valid processing, ensuring ions only process material where gas is present rather than allowing processing at unintended positions.
2Productivity
If ion beam radiation is continuously applied during gas supply transitions, then processing can be maintained without interruption, but unintended processing occurs in areas outside the set area
Solution Approach 1:
The patent performs preliminary action by establishing the gas supply condition before activating or deactivating the ion beam. Specifically, gas supply is started before ion beam radiation begins and is stopped after ion beam radiation ends, ensuring the processing environment is properly established before ion exposure and maintained until ion exposure is complete.
Solution Approach 2:
The patent applies preliminary anti-action by using the gas supply timing to preemptively prevent unintended processing. The gas supply is extended beyond the ion beam active period to create a protective buffer zone in time, preventing ions from processing areas outside the intended region during transition phases.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses processing in areas other than the intended region, preventing defects like short circuits and ensuring precise control over ion beam operations during microstructure fabrication.
Implementation Method 1
a step of radiating the ion beam to the sample; a step of processing the sample by radiating the ion beam to the sample
Data Source
AI summary
The present invention provides a technology for avoiding radiation of an ion beam at a position other than a desired processing position. A microstructure manufacturing method includes a step of radiating an ion beam to a sample; a step of supplying a gas to the sample; a step of stopping supplying the gas to the sample; and a step of stopping radiating the ion beam to the sample. The step of radiating the ion beam is performed earlier than the step of supplying the gas or the step of stopping supplying the gas is performed earlier than the step of stopping radiating the ion beam.