Electric Discharge Tubes TRIZ Cases

Rotating a workpiece relative to a stationary ion beam compensates for radial non-uniformity during implantation or deposition.

A PVD cathode assembly integrates an in-situ thickness detector to monitor target depletion during sputtering.

Adjustable coupler connector design minimizes alien crosstalk and noise through crossover configurations on a flexible printed circuit board.

UV radiation removes fluorine residues to prevent hydrofluoric acid formation, eliminating low-k leakage defects and carbon depletion.

Segmenting the carbon layer with a precise gap prevents chemical interaction at the tip, extending usable time while maintaining beam convergence.

Inductive coupling transfers power across a sealed dielectric barrier, isolating electrodes from residual oxygen to extend lifespan.

A dielectric spacer fills blank regions between L-shaped contacts to increase electrostatic capacitance in multi-level electric connectors.

An RF return path electrode on the dielectric body minimizes uncontrolled RF losses and signal cross-talk to improve film deposition uniformity.

A positively biased ion extractor transfers electrons from a high-density donor plasma region to an acceptor region near the wafer.

Side wall depressions enable accurate planarity inspection of socket contacts despite reduced protrusion lengths, resolving size versus measurement trade-offs.

Segmented control stabilizes substrate voltage during ion implantation, preventing rapid current decrease from sheath growth.

Dynamic aperture and lens control resolves the trade-off between depth of field and image resolution in electron beam imaging.

Segmented multi-walled magnetron tube stabilizes magnetic field intensity while enabling precise distance control and efficient cooling.

A charged particle beam apparatus includes a sample stage with a foreign matter observation unit to detect contaminants on measurement samples.

Coordinate transformation maps orthogonal beam axes to stage drive directions, preventing erroneous positioning during cross-section observation.

A dose calculation unit applies distinct formulas to edge and interior shot types in charged particle beam writing.

Applying periodic RF voltage creates alternating ion and electron phases, neutralizing substrate charge to prevent etch pattern non-uniformity.

A plasma etching method hardens photoresist surfaces using carbon and sulfur gases to create a robust mask layer.

A substrate treating apparatus generates plasma using electrostatic chucks and ion blockers to clean semiconductor wafers.

A controllable variable impedance component at a combiner isolation port dynamically adjusts generator source impedance for plasma processing applications.

Partition walls segment the gas space between substrate and base stand, suppressing abnormal discharge while maintaining cooling stability.

Segmenting the meandering portion into parallel sections reduces electric resistance, enabling longer contactors with desired displacement.

A compressible lossy member with projections contacts ground terminals to reduce resonances and improve signal integrity without increasing connector density.

Ion beam irradiation smooths silica aerogels without mechanical contact, preventing structural collapse from liquid meniscus forces.

A gas cooled electrostatic chuck uses internal channels and a gas box to regulate substrate temperature during semiconductor processing.

Plasma pre-treatment modifies dielectric surfaces to enable conformal metal oxide barrier deposition via atomic layer deposition.

Reversing power cable polarity via stored energy extinguishes arcs, eliminating costly secondary supplies and reducing system failure risks.

Pulsed bias power and gas mixtures prevent photoresist loss during deep hole etching of multilayer films.

Polyatomic dopant source compounds form cluster ions to increase dopant ion density during semiconductor substrate implantation.

A rotation axis uses an indented washer and movable support to provide tactile feedback.

Sequential gas mixtures suppress hole bending in multilayered films by reducing sidewall inclination during plasma etching.

A plasma discharge device converts cosmic ray ionization into electrical kinetic energy using novel electrode geometries.

Iterative displacement vectors adjust work patterns to counteract electron scattering, ensuring precise shape fidelity in complex lithography layouts.

Segmented grounds on a mounting substrate cancel magnetic interference from control currents, stabilizing electron beam placement.

Replacing hydrogen fluoride with radicalized halogen gases enables isotropic etching at lower temperatures, reducing thermal stress on semiconductor substrates.

Electromagnet creates a magnetic field distribution with a maximum horizontal component at the focus ring to increase plasma density near chamber walls.

A charged particle beam apparatus evaluates specific brightness area size to select optimal lens conditions for precise beam convergence.

Overlapping alignment keys on aperture sheets resolve positioning contradictions to improve semiconductor patterning yield.

Applying a low frequency bias during deposition achieves precise sidewall coverage while eliminating plasma damage from expensive dry etch tools.

A pattern measurement device calculates variability using a computation processing device to separate measurement reproducibility error from true shape variability.

A backside purging system supplies reactant gas to the substrate edge while a vacuum clamping system holds the wafer in place during deposition.

A microstructure manufacturing method sequences ion beam radiation and gas supply steps to prevent unintended processing outside the target area.

Magnetic confinement generates shielding plasma to prevent solid deposition, ensuring stable DC impedance and homogeneous surface treatment.

An Ag alloy sputtering target uses controlled Cu and Sn levels to prevent aggregation during deposition.

Maintaining a minimum current in the scanning electromagnet stabilizes beam emission near zero-current regions, improving irradiation position accuracy.

Varying USB-C connector tongue contact lengths prevents transient current pathways that damage ESD diodes during disconnection.

Segmenting the imaging sensor allows simultaneous spectrum exposure and data readout, eliminating idle periods that limit acquisition speed.

Low-energy ion beam milling delayers semiconductor layers without introducing surface defects, preserving electrical integrity during sample preparation.

Segmenting control into local controllers reduces command latency and cable complexity while enhancing scalability in plasma generating systems.

A film forming apparatus adjusts plasma window height to control antenna gap and influence ion-radical interaction on the wafer surface.