Substrate Treating Apparatus Plasma Mode Control
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Solution Overview
Problem
In semiconductor device fabrication, as the aspect ratio of patterns on substrates increases, conventional chemical treatments struggle to effectively remove both organic and inorganic impurities from the substrate surfaces, especially within intricate patterns, due to poor permeation of cleaning agents.
Innovation Solution
A substrate treating apparatus is designed with a housing, electrostatic chuck, ion blocker, and multiple power and gas supply modules to generate and control plasma in different modes, allowing for targeted removal of impurities by differentiating the treating mode based on the type of impurities present, using various gases like He, Ar, NF3, and NH3 to create effective plasma treatments.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If chemical treatment is used to remove impurities from substrate, then organic impurities can be removed, but inorganic impurities cannot be effectively removed when aspect ratio is high
Solution Approach 1:
The apparatus dynamically switches between different treating modes (first mode for organic impurities, second mode for inorganic impurities) based on the type of impurities present. The power supply units and gas supply units are controlled to generate different plasma conditions, transforming the static chemical treatment into a dynamic adaptive process that can handle both organic and inorganic impurities effectively.
Solution Approach 2:
The system changes physical parameters (power input, gas composition, plasma density) to create different treating modes. By adjusting these parameters, the apparatus can generate plasma conditions suitable for removing organic impurities (first mode) or inorganic impurities (second mode), thereby resolving the contradiction between removing different types of impurities.
2Ease of operation
If conventional chemical treatment is applied, then the process is simple, but the treatment cannot penetrate into high aspect ratio holes effectively
Solution Approach 1:
The patent replaces conventional liquid chemical treatment with plasma-based treatment. Plasma, being in a gaseous state with high reactivity, can penetrate into high aspect ratio holes more effectively than liquid chemicals, while maintaining operational simplicity through automated plasma generation and control.
3Device complexity
If single treating mode is used, then the apparatus is simple to operate, but it cannot differentiate treatment for different impurity types
Solution Approach 1:
The apparatus is designed with multi-functionality, capable of operating in at least two different treating modes using the same hardware components. The power supply units and gas supply units can be controlled to generate different plasma conditions, allowing a single device to perform both organic impurity removal (first mode) and inorganic impurity removal (second mode), thereby resolving the contradiction between device simplicity and treatment versatility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This apparatus efficiently removes impurities from substrates by generating appropriate plasma modes that can penetrate and treat both organic and inorganic contaminants, improving the removal efficiency and adapting to different types of impurities, thus enhancing the cleaning process in semiconductor fabrication.
Implementation Method 1
a bottom electrode for generating a plasma at the treating space
Implementation Method 2
supplying a process gas for exciting to the plasma by the bottom electrode or the top electrode
Implementation Method 3
a top electrode...generating a plasma at a plasma space which is a space between the ion blocker and the top electrode
Implementation Method 4
the ion blocker is grounded and removes an ion from the plasma generated at a plasma space
Data Source
AI summary
The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing defining a treating space; a chuck supporting a substrate at the treating space and providing a bottom electrode for generating a plasma at the treating space; a top electrode; and an ion blocker positioned between the top electrode and the treating space.