Low Frequency Bias for Selective Dielectric Deposition
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Solution Overview
Problem
Current methods for selective sidewall deposition in microelectronics processing face challenges such as device degradation due to plasma damage and the need for expensive dry etch tools, particularly in achieving precise end point control during the deposition and etching of conformal films in three-dimensional structures.
Innovation Solution
A substrate processing system with a susceptor assembly, gas distribution assembly, and low-frequency bias generator is used, allowing for selective deposition and plasma treatment of substrates in a batch processing chamber, enabling directional plasma treatment and minimizing additional equipment and costs by applying a low-frequency bias to the susceptor during the deposition process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If dry etch process is used to remove film from horizontal surfaces, then selective sidewall coverage is achieved, but device degradation occurs due to plasma damage
Solution Approach 1:
The patent converts the potentially harmful conformal deposition process into a beneficial selective deposition process by using the mandrel geometry to naturally direct the deposition flux. The same conformal ALD process that would normally cover all surfaces is instead made to selectively cover only sidewalls due to the geometric configuration of the mandrel structure. This eliminates the need for subsequent damaging dry etch processes to remove film from horizontal surfaces, as the selective coverage is achieved inherently through the deposition geometry and mandrel design.
2Manufacturing precision
If expensive dry etch tools are used to achieve selective sidewall deposition, then precise end point control is achieved, but processing cost increases
Solution Approach 1:
The patent extracts the selective deposition functionality from the expensive dry etch process by using a self-aligned mandrel structure that provides inherent geometric control. The mandrel geometry itself acts as the selective mask, eliminating the need for complex dry etch end point control mechanisms. The selective sidewall coverage is achieved through the physical geometry of the mandrel and the conformal deposition process, rather than through expensive plasma etching equipment and complex process control systems, thereby reducing processing costs while maintaining precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the selective deposition of films on sidewalls while protecting horizontal surfaces, allowing for precise control over film properties and reducing the risk of device degradation, thereby improving processing efficiency and reducing costs.
Implementation Method 1
at least one of the processing regions comprises a plasma processing region with a main deposition generator operating at a main deposition generator frequency
Implementation Method 2
The low frequency bias generator is electrically connected to the susceptor assembly to apply a low frequency bias to the susceptor assembly
Implementation Method 3
providing power to the main deposition generator to form a plasma in the plasma processing region
Implementation Method 4
The susceptor assembly has a top surface and a central axis to rotate a plurality of substrates positioned on the top surface around the central axis of the susceptor assembly
Implementation Method 5
providing flows of gases into a plurality of processing regions, each processing region separated from adjacent processing regions by a gas curtain
Data Source
AI summary
Apparatus and methods for depositing and treating or etching a film are described. A batch processing chamber includes a plurality of processing regions with at least one plasma processing region. A low frequency bias generator is connected to a susceptor assembly to intermittently apply a low frequency bias to perform a directional treatment or etching the deposited film.