Ion Beam Sample Preparation for Crystalline Structure Analysis
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Solution Overview
Problem
Existing methods for analyzing samples, particularly those with low-density materials, fail to provide clear information about crystalline structures due to sample preparation techniques that damage the material, such as the use of gallium ions which penetrate deep into the sample.
Innovation Solution
A method and device that generate and select ions with specific masses and charges, using a Wien filter to focus heavy or highly charged ions that do not penetrate the sample, allowing for effective preparation and analysis of the sample's crystalline structure without damage, combined with electron beam interaction to detect scattered electrons for spatial distribution analysis.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If gallium ions are used for sample preparation, then the sample surface can be prepared, but the crystalline structure is destroyed due to deep penetration
Solution Approach 1:
The patent changes the mass parameter of the ion beam from light ions (gallium) to heavy ions (xenon, krypton, or combinations with mass >100 amu). This parameter change fundamentally alters the ion penetration depth, allowing surface preparation without destroying the underlying crystalline structure, thus resolving the contradiction between preparation quality and structure preservation
Solution Approach 2:
The patent uses a dual-ion beam approach where a first heavy ion beam prepares the surface and a second heavy ion beam (or the same beam after reconfiguration) analyzes the crystalline structure. This copying approach allows the analysis beam to replicate the preparation process conditions while avoiding the penetration damage issue, enabling both preparation and analysis without structure destruction
2Device complexity
If a single ion beam is used for both preparation and analysis, then device complexity is reduced, but measurement precision deteriorates due to ion penetration damage
Solution Approach 1:
The patent implements a dynamic ion beam system where a single ion beam can be reconfigured between preparation and analysis modes. The beam parameters (mass, energy, focus) are dynamically adjusted: heavy ions are used for preparation, then the beam is reconfigured for analysis. This dynamic adaptability allows one beam system to perform both functions with optimal parameters for each task, maintaining measurement precision while managing device complexity
Solution Approach 2:
The ion beam device is designed with universal capability to perform multiple functions: surface preparation using heavy ions, crystalline structure analysis using the same beam system with adjusted parameters, and potentially other analysis modes. This multi-functionality eliminates the need for separate dedicated beams for each task, reducing overall device complexity while maintaining high measurement precision through parameter optimization
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables clear analysis of crystalline structures in low-density materials by preventing sample damage during preparation, providing precise spatial distribution data of scattered electrons for accurate structural information.
Implementation Method 1
a filter which provides both an electric field and a magnetic field
Implementation Method 2
a filter which provides both an electric field and a magnetic field
Implementation Method 3
The ions are combined in an ion beam and directed toward a semiconductor mask to be repaired. A desired type of ions is selected on the basis of their mass with the help of a filter which provides both an electric field and a magnetic field.
Implementation Method 4
Due to an interaction of the ion beam incident on the semiconductor mask with the material of the semiconductor mask, interaction particles are generated, in particular secondary electrons or secondary ions, which are emitted from the semiconductor mask.
Implementation Method 5
Due to the interaction between the electrons of the electron beam and the material of the sample, electrons are backscattered from the surface of the sample. The distribution of the backscattered electrons is determined to thereby obtain information about the crystalline structure of the sample.
Data Source
AI summary
A device and method for analyzing a sample, in particular a sample which contains low-density materials, is provided. Ions of a predefined mass and/or a predefined elementary charge are selected from a plurality of ions. The selected ions are directed onto the sample for sample preparation. An electron beam is then directed onto the prepared sample and a spatial distribution of scattered electrons is measured.