Ion Beam Control via Segmented Electrodes
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Solution Overview
Problem
Conventional ion implantation systems face limitations in beam current operation range, leading to either under-focusing or over-focusing of ion beams, which restricts the throughput in semiconductor manufacturing, especially when beam current is above 9 mA or below 0.5 mA.
Innovation Solution
An ion implantation system with a terminal suppression electrode, an independently driven lens, and a focus electrode, each applying distinct potentials to control the ion beam, allowing for a wider beam current operation range from 0.1 mA to 25.7 mA, enabling precise control and increased throughput.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If beam current is increased to increase throughput, then production throughput is improved, but beam focusing deteriorates (beam becomes under-focused and unable to be transported through beam-line)
Solution Approach 1:
The accelerator is divided into multiple independently controllable electrodes (terminal electrode, focus electrode, and lens) with separate voltage supplies. This segmentation allows each electrode to be optimized for different beam current conditions, enabling the system to maintain proper beam focusing across a wide current range from 0.1 mA to 25.7 mA while achieving high throughput.
2Manufacturing precision
If beam current is decreased to improve focusing, then beam focusing precision is improved, but production throughput deteriorates
Solution Approach 1:
The system employs dynamic voltage control of the lens electrode based on beam current conditions. The lens voltage is adjusted dynamically to compensate for changes in beam current, allowing the system to maintain optimal focusing across the full operating range from low current (0.1 mA) to high current (25.7 mA), thus achieving both precision and throughput.
3Adaptability or versatility
If conventional accelerator structure is used, then device complexity is low, but beam current operation range is limited
Solution Approach 1:
The accelerator structure is segmented into multiple electrodes (terminal, focus, and lens) with independent voltage supplies. This segmentation increases the beam current operation range from the conventional limited range to 0.1 mA - 25.7 mA, while the added complexity is managed through modular design where each electrode can be controlled independently.
Solution Approach 2:
The lens electrode serves multiple functions: it acts as a focusing element for low beam currents and as a beam transport element for high beam currents. This multi-functionality allows a single electrode to adapt to different operating conditions, expanding the overall operation range without proportionally increasing system complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system achieves improved production throughput by extending the beam current operation range, allowing for high dose ion implantation in the 60 keV to 300 keV energy range, specifically benefiting power device fabrication with minimal structural changes, thus enhancing manufacturing efficiency.
Implementation Method 1
the terminal suppression electrode is configured to conduct the ion beam through an aperture of the terminal suppression electrode and to apply a first potential to the ion beam from a first voltage supply
Implementation Method 2
the lens is configured to conduct the ion beam through an aperture of the lens and to apply a second potential to the ion beam from a second voltage supply
Implementation Method 3
a lens coupled to the terminal and disposed adjacent the terminal suppression electrode, wherein the lens is configured to conduct the ion beam through an aperture of the lens and to apply a second potential to the ion beam
Implementation Method 4
a focus electrode configured to receive the ion beam from the lens, wherein the focus electrode is configured to apply a third potential to the ion beam
Data Source
AI summary
Provided herein are approaches for controlling an ion beam within an accelerator/decelerator. In an exemplary approach, an ion implantation system includes an ion source for generating an ion beam, and a terminal suppression electrode coupled to a terminal, wherein the terminal suppression electrode is configured to conduct the ion beam through an aperture of the terminal suppression electrode and to apply a first potential to the ion beam from a first voltage supply. The system further includes a lens coupled to the terminal and disposed adjacent the terminal suppression electrode, wherein the lens is configured to conduct the ion beam through an aperture of the lens and to apply a second potential to the ion beam from a second voltage supply. In an exemplary approach, the lens is electrically insulated from the terminal suppression electrode and independently driven, thus allowing for an increased beam current operation range.