Ion Implantation Apparatus with Adjustable Downstream Electrode
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Solution Overview
Problem
Ion implantation apparatuses are limited by their categorization into high-current, medium-current, and high-energy categories, leading to compatibility issues and reduced productivity due to the need for multiple apparatuses to handle different implantation conditions, making it difficult to switch between categories without compromising device characteristics and efficiency.
Innovation Solution
An ion implantation apparatus with a scanning unit and downstream electrode device that allows for adjustable beam scanning and energy settings, enabling operation as both a high-current and medium-current apparatus, thereby expanding the energy and dose range without changing the apparatus type, using a beamline device with energy and beam current adjustment systems to accommodate various implantation conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If ion implantation apparatuses are classified into different categories (high-current, medium-current, high-energy), then each category can be optimized for its specific function, but multiple apparatuses are required to handle different implantation conditions, reducing productivity and increasing complexity
Solution Approach 1:
The patent applies universality by designing a single ion implantation apparatus that can function across multiple operating categories (high-current and medium-current modes). The apparatus achieves this through configurable beamline components and adjustable parameters that allow it to serve multiple purposes without requiring separate dedicated machines for each category.
Solution Approach 2:
The patent implements dynamics by making the beamline configuration adjustable and reconfigurable. Key components such as the scanning electrode device and downstream electrode device can be dynamically adjusted to change the apparatus's operating characteristics, allowing transition between different implantation modes (high-current vs. medium-current) based on processing requirements.
2Productivity
If separate apparatuses are used for different implantation categories, then each apparatus can be optimized for its specific category, but switching between categories requires changing apparatus types, compromising efficiency and productivity
Solution Approach 1:
The apparatus achieves universality by integrating multiple functional capabilities into a single system. It can perform both high-current ion implantation and medium-current ion implantation operations, eliminating the need to switch between different apparatus types while maintaining optimized performance for each category through adjustable parameters and reconfigurable beamline settings.
Solution Approach 2:
The system employs dynamic reconfiguration capabilities that allow rapid switching between operating modes. The beamline device and associated electrode systems can be adjusted on-demand to match the required implantation category, enabling seamless transitions between high-current and medium-current operations without physical apparatus changes.
3Adaptability or versatility
If the beamline configuration is fixed for a specific category, then the apparatus performs well in that category, but it cannot handle other implantation conditions, limiting versatility
Solution Approach 1:
The beamline configuration is made dynamic and reconfigurable rather than fixed. Key components including the scanning electrode device and downstream electrode device can be adjusted to modify beam properties, allowing the apparatus to adapt to different implantation conditions (energy, dose, current) while maintaining manufacturing precision through controlled adjustment of these parameters.
Solution Approach 2:
The apparatus utilizes parameter changes to achieve versatility. By adjusting operational parameters such as beam energy, beam current, and electrode positioning, the same physical apparatus can deliver precise results across different implantation categories. The downstream electrode device's variable opening dimensions allow parameter adjustment to maintain device characteristics across different operating modes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution allows for a single apparatus to handle a broad range of energy and dose conditions, improving productivity and reducing the need for multiple machines, enhancing operational efficiency and flexibility in semiconductor manufacturing by enabling seamless transitions between different implantation conditions.
Implementation Method 1
a scanning electrode device that allows a deflecting electric field to act on an ion beam incident along a reference trajectory and scans the ion beam in a horizontal direction
Implementation Method 2
a downstream electrode device disposed downstream of the scanning electrode device and provided with openings through which the ion beam scanned in the horizontal direction passes
Data Source
AI summary
An ion implantation apparatus includes a scanning unit scanning the ion beams in a horizontal direction perpendicular to the reference trajectory and a downstream electrode device disposed downstream of the scanning electrode device. The scanning electrode device includes a pair of scanning electrodes disposed to face each other in the horizontal direction with the reference trajectory interposed therebetween. The downstream electrode device includes an electrode body configured such that, with respect to an opening width in a vertical direction perpendicular to both the reference trajectory and the horizontal direction and/or an opening thickness in a direction along the reference trajectory, the opening width and/or the opening thickness in a central portion in which the reference trajectory is disposed is different from the opening width and/or the opening thickness in the vicinity of a position facing the downstream end of the scanning electrode.