Electric Discharge Tubes TRIZ Cases

Adjustable rotary resonant cavity geometry concentrates electric fields to resolve low focusing ability in microwave plasma chemical vapor deposition reactors.

RF power compensation logic uses transmission line models to adjust plasma processing settings, reducing monitoring time and cost.

Controlling SiO2 particle size in the sputtering target reduces cristobalite-induced particles and shortens burn-in time.

Symmetric four-stage Wien filters cancel positional and angular dispersion, ensuring uniform electron beam energy and circular virtual source shape.

A charged particle beam deflection device uses optical couplers and modulators to distribute light for electrode voltage control.

Grooves in the lens structure circulate coolant fluid to eliminate heat generation, maintaining resolution without increasing volume.

Specific fiber length minimizes phase fluctuations from connector bonding states, ensuring stable displacement measurement without light quantity loss.

A dispersing electron lens positioned off-axis introduces spatial dispersion to filter energy spread, minimizing chromatic aberrations and improving resolution.

Segmented gas inlet pipes with nozzles distribute reactants into the processing chamber for inductively coupled plasma generation.

An optical cavity creates a standing wave to modulate electron beam phase without physical material interference.

Multi-level contact arrangement on a stepped mating plate increases data transmission rates without expanding the connector footprint for miniaturized devices.

Segmenting the cover into a shielding portion and a window prevents heat damage to the holding sheet during wafer processing.

A capacitive element uses a liquid dielectric with an upper wall opening section to exhaust air bubbles from the storage container.

A non-dissipative snubber circuit absorbs voltage spikes and discharges stored energy to boost current ramp rates in plasma loads.

An interferential optical position sensor measures picometer-level vibrations to correct specimen drift and improve imaging resolution.

An embedded conductive layer within a dielectric chamber wall minimizes capacitive sputtering while maintaining thermal transport efficiency.

Dynamic variable addition prevents control errors when primary parameters exceed limits, ensuring uninterrupted plasma processing and high operating rates.

A segmented annular plasma confinement ring minimizes flow resistance while maintaining low chamber pressure and reducing wall deposition.

Uses DC bias signals from chamber walls to determine cleaning completion in remote plasma sources, avoiding extra detectors.

A scanning particle microscope uses a distance measuring device to track reference objects for precise element positioning on photolithographic masks.

Optimized Cu-Ca alloy composition suppresses abnormal discharge during high-power sputtering, ensuring uniform film thickness and improved adhesion.

Controller adjusts ion beam energy and irradiation angle via scanner and electrodes for precise semiconductor processing.

Segmented coil sections tilt to clear loading paths while maintaining homogeneous magnetic fields in coating facilities.

A TEM specimen preparation apparatus uses high-brightness pixel detection to precisely stop ion beam irradiation during thinning.

Enriching niobium at grain boundaries in the sputtering target suppresses leakage current in lead-free piezoelectric thin films.

An aluminum interlayer joins tungsten targets to titanium backing plates, resolving thermal expansion mismatch that causes bond cracking.

A cleaning jig featuring a return on its tip mechanically scrapes reaction products from semiconductor lift pin holes.

A hybrid plasma source merges helicon and electron cyclotron resonance mechanisms to generate high-density ionized gas.

Tune electrode capacitance within 20% of resonance peak to increase film density and etch selectivity while reducing porosity.

Curved gas holes in plasma etching electrode plates prevent abnormal discharges and maintain dimensional stability against plasma erosion.

A plasma processing apparatus forms reaction product films on an upper electrode using high-frequency power to enable subsequent sputtering.

A biased ion shield with apertures separates ions from neutral radicals, enabling conformal nitridation of 3D structures while blocking reactive hydrogen.

A semi-barrier separates two plasma regions, allowing radical migration to decouple chemical and physical properties for precise etch tuning.

Arrayed compact electron sources reduce device footprint while maintaining sufficient electron supply for large substrates.

Periodic RF power delivery maintains high reaction throughput while limiting gas temperature to prevent thermal damage during industrial processing.

Alternating high-bias Cl2 etching and oxygen passivation preserves sidewalls while removing large amounts of tungsten.

Segmenting remote plasma sources prevents cross-contamination between deposition and cleaning cycles, stabilizing deposition rates.

A semiconductor test device uses voltage contrast scanning to identify circuit defects.

An engineered polycrystalline silicon layer on the susceptor mitigates edge boundary effects to resolve non-uniform thickness in semiconductor etching.

A magnetron sputtering apparatus moves a concentrated magnetic field along the target axis to stabilize plasma at a single spot.

A second end-point determination system controls a shutter to regulate light intensity between a plasma source and an optical emission spectroscopy sensor.

Low-density plasma CVD with TEOS forms organosilicon oxide films below 300°C, resolving ashing resistance and productivity trade-offs.

A scanning unit and downstream electrode device adjust beam parameters to handle varied ion implantation conditions.

Depositing a SiOCl protection layer on spacer sidewalls prevents excessive footing and substrate recess during anisotropic etch processes.

Tensile stress in silicon oxide membranes prevents wrinkling during underetching, maintaining surface planarity for cell imaging.

A compact charged particle accelerator uses a beam blocker grating to divide continuous electron streams into short pulses.

Rotating gas nozzles with multiple discharge holes adjust orientation to control plasma processing gas distribution.

Segmenting polygons into trapezoids with variable dose amounts corrects proximity effect variations while maintaining compact coordinate storage.

A capacitive coupling system supplies high-frequency current to rotating tubular cathodes within vacuum chambers.

High-density halogen precursors remove hafnium films without plasma-induced charge buildup or structural deformation.