Plasma Processing Apparatus Electron Sources
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Solution Overview
Problem
Conventional plasma processing apparatuses with large electron sources face challenges in maximizing substrate size due to increased footprint, limiting throughput and viability in existing systems, and pose contamination risks due to sputtering.
Innovation Solution
A plasma processing apparatus utilizing a plurality of compact electron sources with resonant structures and a gas plenum chamber, configured to supply electrons to a plasma, with each source capable of receiving AC power and held at a negative DC bias voltage, allowing for spatially uniform electron supply and improved control over plasma properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If large electron sources (hollow cathodes or external sources) are used to supply electrons for electron-beam sustained plasmas, then sufficient electron supply is achieved, but the device footprint becomes prohibitively large and bulky
Solution Approach 1:
The patent divides the electron source function into multiple small electron sources arranged in an array around the processing chamber, rather than using a single large electron source. Each small electron source contributes to the overall electron supply, achieving the required quantity while keeping individual source dimensions small and the overall footprint compact.
Solution Approach 2:
The patent transitions from a single large electron source occupying significant space to multiple small electron sources distributed in a two-dimensional array configuration around the chamber. This spatial distribution across multiple dimensions allows sufficient electron supply without increasing the linear footprint of the device.
2Area of stationary object
If multiple small electron sources are used instead of large electron sources, then device footprint is reduced, but achieving sufficient electron supply and plasma uniformity becomes challenging
Solution Approach 1:
The patent combines the outputs of multiple small electron sources to achieve the cumulative electron supply required for sustained plasma. By merging the electron contributions from numerous small sources arranged in an array, the system achieves sufficient total electron flux while maintaining a compact footprint.
Solution Approach 2:
The patent applies local quality by distributing electron sources throughout the chamber perimeter, with each local source providing electrons to its nearby region. This localized electron supply approach ensures uniform plasma generation across the entire processing area while using small individual sources that fit within compact dimensions.
3Quantity of substance
If conventional large electron sources are used, then electron supply is sufficient, but contamination risks increase due to sputtering
Solution Approach 1:
The patent extracts the problematic feature of large electron sources that causes sputtering and contamination. By replacing the large source with multiple small sources, the system maintains sufficient electron supply while eliminating the excessive material erosion and contamination associated with large cathode structures.
Solution Approach 2:
The patent employs small electron sources that can be easily replaced or maintained compared to large electron sources. These smaller sources experience less cumulative sputtering damage and can be more readily serviced, reducing contamination risks and maintenance complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The compact design enhances plasma uniformity and control, reduces the overall footprint, and allows for efficient processing of larger substrates, improving throughput and reducing contamination risks.
Implementation Method 1
Each of the plurality of electron sources includes a resonant structure disposed at the first side and configured to be held at a negative direct current bias voltage
Implementation Method 2
resonant structure disposed at the first side and configured to be held at a negative direct current bias voltage
Implementation Method 3
Each of the plurality of electron sources includes a resonant structure disposed at the first side and configured to be held at a negative direct current bias voltage
Implementation Method 4
electron-beam sustained plasmas can provide various advantages for sensitive plasma processes
Implementation Method 5
plasma generated in the processing chamber
Data Source
AI summary
A plasma processing apparatus includes a processing chamber, a substrate disposed in the processing chamber, and a plurality of electron sources configured to supply electrons to a plasma generated in the processing chamber. Each of the plurality of electron sources includes a first side facing the plasma in the processing chamber. Each of the plurality of electron sources also includes a resonant structure disposed at the first side and configured to be held at a negative direct current bias voltage.