Ion Implantation Apparatus Dynamic Energy and Angle Control
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Solution Overview
Problem
The productivity of ion implantation processes is reduced due to the need for frequent adjustments of ion sources and implantation angles in forming regions with different ion implantation energies and angles on semiconductor wafers, leading to operational inefficiencies and characteristic variations in semiconductor devices.
Innovation Solution
An ion implantation apparatus with a controller that adjusts the energy and irradiation angle of the ion beam in real-time by controlling the ion source, scanner, and electrodes, allowing for precise formation of multiple implantation energy and angle regions without the need for constant adjustments of the ion source or implantation chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If ion source adjustments are performed for each ion implantation energy or angle, then implantation precision is improved, but productivity deteriorates
Solution Approach 1:
The patent applies preliminary action by pre-configuring multiple ion sources with different implantation energies and angles before the actual implantation process. This allows the system to switch between pre-configured sources without requiring time-consuming adjustments during production, thereby maintaining precision while improving productivity
Solution Approach 2:
The patent segments the ion source system into multiple independent ion sources, each configured for specific implantation energies and angles. This segmentation eliminates the need to adjust a single ion source for different parameters, as each source is dedicated to specific settings, thus resolving the contradiction between precision and productivity
2Reliability
If ion source adjustments are performed for each implantation condition, then implantation consistency is improved, but operational efficiency deteriorates
Solution Approach 1:
The system performs preliminary configuration of multiple ion sources with precise implantation parameters before production. This preliminary setup ensures consistent implantation quality across different conditions while avoiding time-consuming adjustments during operational phases, thereby maintaining reliability without sacrificing operational efficiency
3Adaptability or versatility
If multiple ion source adjustments are required, then versatility in forming different implantation regions is improved, but device complexity increases
Solution Approach 1:
The patent divides the ion source system into multiple specialized sources, each optimized for specific implantation energies and angles. This segmentation provides versatility in forming different implantation regions while managing complexity through modular design, where each segment is independently configured and controlled
Solution Approach 2:
The system achieves universality by designing multiple ion sources that can collectively perform various implantation tasks. Each source is specialized yet the combined system provides multi-functionality, allowing versatile formation of different implantation regions without requiring overly complex adjustment mechanisms
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances productivity by reducing operational losses, allowing for the rapid formation of multiple implantation regions and improving yield and consistency in semiconductor devices by dynamically controlling the ion beam's energy and angle based on the irradiation position.
Implementation Method 1
an ion source configured to generate an ion beam
Implementation Method 2
a first electrode configured to accelerate an ion in the ion beam
Implementation Method 3
a scanner configured to change an irradiation position with the ion beam on an irradiation target
Implementation Method 4
a controller configured to change at least any of energy and an irradiation angle of the ion beam according to the irradiation position by controlling the ion beam
Data Source
AI summary
In one embodiment, an ion implantation apparatus includes an ion source configured to generate an ion beam. The apparatus further includes a scanner configured to change an irradiation position with the ion beam on an irradiation target. The apparatus further includes a first electrode configured to accelerate an ion in the ion beam. The apparatus further includes a controller configured to change at least any of energy and an irradiation angle of the ion beam according to the irradiation position by controlling the ion beam having been generated from the ion source.