Ion-Implanted Semiconductor Layer Transfer for Crystal Quality
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Solution Overview
Problem
In 3D integration of semiconductor devices, existing methods like SMARTCUT® face challenges in transferring semiconductor material with minimal damage to active regions and achieving high-quality crystal lattice, due to ion implantation-induced defects and impurities at the fractured surfaces.
Innovation Solution
A method involving implanting ions into a donor structure to create a planar weakened zone with varying ion concentration and composition, allowing for controlled separation and transfer of semiconductor material, while minimizing damage to active regions through selective ion implantation and subsequent bonding and fracturing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If ion implantation is performed to create a weakened zone for material transfer, then the transfer process can be enabled, but ion impurities and crystal lattice defects are introduced at the fractured surfaces
Solution Approach 1:
The patent extracts and removes the damaged portions containing ion impurities and crystal lattice defects from the transferred semiconductor layer through selective etching processes. This allows the healthy crystal lattice regions to remain while discarding the compromised surface layers, thereby resolving the contradiction between enabling material transfer and maintaining crystal lattice quality.
Solution Approach 2:
The patent performs preliminary ion implantation to create a weakened zone that facilitates controlled fracturing and separation. By pre-establishing this weakened zone at a specific depth, the process enables clean separation of the semiconductor layer while minimizing damage propagation to the active regions, thus resolving the contradiction between transfer feasibility and crystal quality.
2Manufacturing precision
If thermal annealing at elevated temperatures is applied to reduce impurity levels, then crystal lattice quality improves, but device structures and previously formed layers may be damaged
Solution Approach 1:
The patent performs preliminary ion implantation and controlled fracturing to separate the damaged surface layer from the healthy crystal lattice before any thermal processing. This preliminary separation eliminates the need for high-temperature annealing that would otherwise be required to repair ion-induced damage, thereby preventing damage to device structures while still achieving high crystal lattice quality.
Solution Approach 2:
The patent replaces the thermal processing mechanism (thermal annealing) with a mechanical separation mechanism (controlled fracturing along the ion-implanted weakened zone). This substitution allows defect removal through physical separation rather than thermal repair, avoiding the risks of thermal damage to device structures while maintaining crystal lattice quality.
3Stability of the object's composition
If homogeneous ion implantation is performed across the entire donor structure, then the weakened zone is uniformly formed, but active regions suffer from ion-induced defects and damage
Solution Approach 1:
The patent applies local quality by implanting ions selectively only in the inactive regions of the donor structure, leaving the active regions untouched. This creates a localized weakened zone confined to inactive areas, enabling uniform fracturing in those regions while preserving the pristine crystal lattice and zero-ion state of the active regions, thus resolving the contradiction between uniform weakened zone formation and active region quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables efficient transfer of semiconductor material with reduced defects and impurities, improving the quality of the transferred layer and enabling the fabrication of reliable active device structures.
Implementation Method 1
ions may be implanted into the first donor structure to form a generally planar weakened zone within the first donor structure defined by the implanted ions
Implementation Method 2
The first donor structure may be bonded to a second structure
Implementation Method 3
the first donor structure may be fractured along the generally planar weakened zone
Data Source
AI summary
Methods of transferring a layer of semiconductor material from a first donor structure to a second structure include forming a generally planar weakened zone within the first donor structure defined by implanted ions therein. At least one of a concentration of the implanted ions and an elemental composition of the implanted ions may be formed to vary laterally across the generally planar weakened zone. The first donor structure may be bonded to a second structure, and the first donor structure may be fractured along the generally planar weakened zone, leaving the layer of semiconductor material bonded to the second structure. Semiconductor devices may be fabricated by forming active device structures on the transferred layer of semiconductor material. Semiconductor structures are fabricated using the described methods.