Solid-State Devices TRIZ Cases
- Nanorod LED Core-Shell Structure for Defect Reduction
Segmenting the semiconductor into core-shell nanorods reduces crystal defects caused by lattice mismatch, improving luminous efficiency.
- OLED Sealing Member Through Holes Bonding Strength
Through portions in a first metal layer increase contact area to resolve insufficient bonding force when reducing sealing member width.
- Selective Charge-Trapping Removal in 3D NAND Memory
Selective etching removes charge-trapping material from select gate transistors and dummy memory cells in 3D stacked memory devices.
- Inorganic Electron Transport Layer for OLED Hole Leakage
Mixed-size inorganic particles in the electron transport layer prevent hole leakage and reduce driving voltage.
- Wafer Division via Backside Laser Grooving and Protective Tape
Applying a laser beam from the backside creates deep grooves that guide mechanical cutting, preventing debris adhesion to the functional layer.
- Ion-Implanted Semiconductor Layer Transfer for Crystal Quality
A donor structure uses ion implantation to create a planar weakened zone that enables controlled fracture and material transfer.
- Nonvolatile Memory Cell With Integrated Transistor Current Limiting
An integrated transistor limits current through an oxide-based dielectric layer, reducing device complexity for CMOS embedding.