Ion Source Temperature Control for Shallow Implant Efficiency
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Solution Overview
Problem
Existing ion implantation technologies face challenges in maintaining a high ion cluster ratio and efficient ion beam current for shallow ion implantation, as the ion beam current and temperature dynamics are not effectively controlled, leading to suboptimal implanting efficiency.
Innovation Solution
A temperature controller and cooling system are integrated with an ion beam current detector and thermometer to regulate the source chamber temperature, ensuring a specific ion cluster ratio by adjusting the cooling system's fluid flow rate, thereby maintaining the ion beam current above a predetermined threshold.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the source chamber temperature is not controlled, then the ion beam current may increase initially, but it will surpass the maximum value and decrease to below the minimum threshold current
Solution Approach 1:
The patent implements a feedback control system where the temperature controller continuously monitors the ion beam current and adjusts the cooling system's fluid flow rate based on the detected current level. When the ion beam current exceeds the maximum threshold, the controller increases cooling fluid flow to reduce source chamber temperature, thereby maintaining stable ion cluster formation and preventing current degradation.
Solution Approach 2:
The patent dynamically adjusts the cooling fluid flow rate parameter in response to ion beam current variations. By changing the flow rate parameter, the system controls the source chamber temperature to maintain optimal conditions for ion cluster formation, ensuring the ion beam current remains within the desired range throughout the implantation process.
2Temperature
If the ion beam current is reduced for shallow ion implantation, then the implanting energy can be reduced, but the implanting efficiency decreases
Solution Approach 1:
The patent maintains ion beam current within an optimal range by dynamically adjusting the source chamber temperature through controlled cooling. This parameter control ensures that sufficient ion clusters are formed to maintain high implanting efficiency, while the cooling system prevents excessive temperature rise that would increase implanting energy beyond what is needed for shallow implantation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances the ion implanting efficiency by stabilizing the ion beam current within a targeted range, optimizing the ion cluster formation and maintaining high implanting efficiency for shallow ion implantation.
Implementation Method 1
a cooling system (800), a temperature sensor (810) and a temperature controller (900)... to control the temperature of the source chamber (200) efficiently
Implementation Method 2
an ion implanter uses a filament (100) to ionize the atoms and/or atom clusters to form ions and/or ion clusters in source chamber (200)
Implementation Method 3
An electric field accelerates the ions/ion clusters to form an ion beam (610)
Data Source
AI summary
An implanter is equipped with an ion beam current detector, a temperature sensor, a temperature controller and a cooling system to increase the ratio of a specific ion cluster in the ion source chamber of the implanter. Therefore, the implanting efficiency for a shallow ion implantation is increased consequently.