Ionic Liquid Protective Film for Semiconductor Substrate Oxide Prevention
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The formation of natural oxide films on semiconductor substrates during manufacturing poses challenges in maintaining a clean surface, leading to contamination and degradation of interface properties.
Innovation Solution
A method involving the application of a liquid material containing an ionic liquid as a protective film on the substrate, followed by transferring it in an atmosphere and removing the film in a vacuum to prevent oxide formation and ensure a clean surface for subsequent processing steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If the substrate is exposed to atmosphere during manufacturing, then transfer and processing can be performed, but natural oxide films form on the substrate surface causing contamination and interface property degradation
Solution Approach 1:
A protective film is applied to the substrate surface before atmosphere exposure occurs. This preliminary protective layer prevents oxide film formation during subsequent transfer and processing operations in the atmosphere, allowing easy substrate handling while maintaining surface cleanliness.
Solution Approach 2:
A protective film serves as an intermediary layer between the substrate and the atmosphere. This intermediate layer blocks direct contact between oxygen/moisture in the atmosphere and the substrate surface, preventing oxide formation while allowing the substrate to be transferred and processed normally.
2Object-affected harmful factors
If a protective film is applied to prevent oxide formation, then substrate surface cleanliness is maintained, but additional process steps are required
Solution Approach 1:
The protective film undergoes phase transition through heating to sublime and remove itself from the substrate surface. This self-removal mechanism eliminates the need for additional chemical cleaning steps or manual removal processes, maintaining surface cleanliness while minimizing process complexity.
Solution Approach 2:
The protective film is designed to automatically remove itself through sublimation when heated, without requiring external intervention for removal. This self-service characteristic simplifies the overall process by eliminating the need for separate protective film removal steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively prevents the formation of natural oxide films, reducing contamination and degrading interface properties, thereby enhancing the quality of semiconductor devices by maintaining a clean surface throughout the manufacturing process.
Implementation Method 1
applying a liquid material containing an ionic liquid on a substrate to form a protective film
Implementation Method 2
heating to sublime the protective film to remove the natural oxide film
Data Source
AI summary
In a method of manufacturing a semiconductor device, the method includes: applying a liquid material containing an ionic liquid on a substrate to form a protective film; transferring at an atmosphere the substrate on which the protective film is formed; and removing the protective film from the substrate that has been transferred at the atmosphere.