IPD Formation Over Encapsulant in Fan-Out Wafer Level Packaging
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Solution Overview
Problem
The existing manufacturing processes for semiconductor devices are complex and costly, particularly in forming integrated passive devices (IPDs), which face adhesion problems during passivation and require significant vertical space, leading to high aspect ratio gaps between IPD die and baseband die.
Innovation Solution
The formation of semiconductor devices involves a first semiconductor die with conductive and insulating layers, encapsulant deposition, and the creation of IPDs at a predetermined distance away from the die footprint, simplifying the manufacturing process and reducing costs by forming IPDs over the encapsulant, thereby reducing the number of lithography layers and minimizing vertical space requirements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If IPDs are formed external to the die within an interconnect structure over a temporary carrier, then IPD functionality is achieved, but adhesion problems occur during passivation and manufacturing cost increases
Solution Approach 1:
The patent combines the baseband die and IPD into a single integrated structure where the IPD is formed directly over the encapsulant of the baseband die. This merging eliminates the separate temporary carrier approach, resolving adhesion problems by removing the intermediate interface and reducing manufacturing cost by simplifying the overall structure into one integrated unit.
Solution Approach 2:
The patent extracts the temporary carrier from the manufacturing process by forming IPDs directly over the encapsulant of the baseband die. This extraction eliminates the adhesion problems associated with passivation over the temporary carrier and reduces manufacturing complexity by removing the intermediate carrier structure.
2Reliability
If IPDs are formed external to the die, then IPD functionality is achieved, but significant vertical space is required creating high aspect ratio gaps
Solution Approach 1:
The patent transitions from a separate-side IPD configuration to a stacked configuration where IPDs are formed directly over the encapsulant of the baseband die in the vertical dimension. This dimensional change optimizes space utilization by stacking components vertically rather than placing them side-by-side, reducing the aspect ratio gap while maintaining structural integrity through direct encapsulant bonding.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the manufacturing process, reduces costs, and minimizes the aspect ratio gap between IPD and baseband die, enhancing the efficiency and performance of semiconductor devices, especially in high-frequency applications like RF wireless communications.
Implementation Method 1
An encapsulant is deposited around the first semiconductor die
Data Source
AI summary
A semiconductor wafer contains semiconductor die. A first conductive layer is formed over the die. A resistive layer is formed over the die and first conductive layer. A first insulating layer is formed over the die and resistive layer. The wafer is singulated to separate the die. The die is mounted to a temporary carrier. An encapsulant is deposited over the die and carrier. The carrier and a portion of the encapsulant and first insulating layer is removed. A second insulating layer is formed over the encapsulant and first insulating layer. A second conductive layer is formed over the first and second insulating layers. A third insulating layer is formed over the second insulating layer and second conductive layer. A third conductive layer is formed over the third insulating layer and second conductive layer. A fourth insulating layer is formed over the third insulating layer and third conductive layer.