Integrated Passive Device Module Substrate Removal
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Solution Overview
Problem
The integration of multiple semiconductor chips into a single system package is hindered by the use of expensive substrate materials, delicate printed circuit boards (PCBs) that can be damaged by high temperatures, and the complexity and cost of through-substrate vias (TSVs), which limit the number of integrated circuit (IC) chips that can be coupled directly to a substrate.
Innovation Solution
A method of manufacturing a semiconductor device that involves providing a substrate with an insulation layer, forming an integrated passive circuit, removing the substrate, and depositing an insulating polymer film layer with an interconnect structure, allowing for the integration of IC chips and PCB components in a cost-effective and efficient manner.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If expensive specialty substrate materials are used for thin-film processing, then manufacturing precision and reliability are improved, but manufacturing cost increases
Solution Approach 1:
The patent extracts and removes the expensive substrate material after the thin-film integrated passive circuit is formed. The substrate serves only as a temporary support during fabrication, then is etched away completely, leaving only the necessary insulating layer and circuit structures. This eliminates the need for expensive specialty substrates while maintaining manufacturing precision during the critical thin-film processing stages.
2Reliability
If conventional PCB mounting techniques are used with through-substrate vias, then electrical connectivity is achieved, but device complexity and manufacturing cost increase
Solution Approach 1:
The patent transitions from traditional through-substrate via connections (vertical dimension through the substrate) to surface-level interconnect structures formed by depositing conductive layers and insulating polymer films over the insulating layer. This dimensional change eliminates the need for complex TSV fabrication while achieving reliable electrical connectivity through planar interconnect architectures.
3Adaptability or versatility
If delicate PCBs are used as substrates, then flexibility and integration are improved, but reliability deteriorates due to damage from high temperatures
Solution Approach 1:
The patent removes the delicate PCB substrate after the integrated passive circuit is formed on its surface. The PCB serves only as a temporary platform for fabrication, then is completely etched away. This allows the use of delicate materials during manufacturing while the final product consists only of the temperature-resistant insulating layer, circuit structures, and interconnects, eliminating thermal damage concerns in the final device.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces manufacturing costs and cycle time by using cheaper materials and fewer process steps, enabling the integration of multiple devices into a single package while maintaining electrical and mechanical integrity.
Implementation Method 1
depositing an insulating polymer film layer over the insulation layer
Implementation Method 2
forming an interconnect structure over the insulating polymer film layer
Data Source
AI summary
A method of manufacturing a semiconductor device includes providing a substrate with an insulation layer disposed on a top surface of the substrate, forming a passive device over the top surface of the substrate, removing the substrate, depositing an insulating polymer film layer over the insulation layer, and depositing a metal layer over the insulating polymer film layer. A solder mask can be formed over the metal layer. A conformal metal layer can then be formed over the solder mask. A notch can be formed in the insulation layer to enhance the connection between the insulating polymer film layer and the insulation layer. Additional semiconductor die can be electrically connected to the passive device. The substrate is removed by removing a first amount of the substrate using a back grind process, and then removing a second amount of the substrate using a wet dry, dry etch, or chemical-mechanical planarization process.