Inductively Coupled Plasma Sweeping Source for Large Wafer Uniformity
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Solution Overview
Problem
Existing IPVD systems face challenges in achieving uniform plasma fields for wafers larger than 300 mm, particularly at 450 mm, due to limitations in scaling up components and maintaining process performance and throughput while meeting cost constraints, especially for depositing barrier and seed layers in ICs.
Innovation Solution
An inductively coupled plasma sweeping source system that generates a high-density plasma field by configuring a metal source, high-density plasma source, and substrate bias source to create a sweeping plasma operation without moving parts, controlling various operating variables for enhanced uniformity and efficiency on large substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the plasma density is increased to improve deposition efficiency, then the plasma uniformity deteriorates across large wafer areas
Solution Approach 1:
The system dynamically adjusts the power distribution to each antenna segment in real-time based on feedback from plasma diagnostics. This dynamic control allows the plasma density to be optimized for high deposition efficiency while simultaneously maintaining uniformity across the large wafer by compensating for spatial variations
Solution Approach 2:
Plasma diagnostics monitor plasma parameters across the wafer surface, and this information feeds back to the control system which adjusts antenna power levels accordingly. This closed-loop control enables maintenance of both high plasma density for efficiency and uniform plasma distribution for quality
2Area of stationary object
If the plasma field is scaled up to accommodate larger wafers, then the system complexity increases due to unknown optimal configuration and interplay of multiple sources
Solution Approach 1:
The plasma source is divided into multiple independent antenna segments (e.g., four quadrants) that can be individually controlled. Each antenna generates plasma in a specific region, and by independently adjusting the power to each segment, uniform plasma distribution across large 450mm wafers is achieved while maintaining the benefits of larger wafer size
Solution Approach 2:
The segmented antenna design provides a universal platform that can process multiple wafer sizes (300mm, 450mm, and potentially larger) by adjusting the power distribution pattern. The same hardware configuration adapts to different wafer dimensions, reducing system complexity compared to dedicated tools for each wafer size
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system achieves uniform plasma distribution and efficient deposition of metal layers on large wafers, improving process performance and throughput while maintaining low operational costs, suitable for mass fabrication of ICs.
Implementation Method 1
inductively coupled plasma sweeping source
Implementation Method 2
generating from a metal source a sputtered metal onto the substrate
Implementation Method 3
Ionized Physical Vapor Deposition (IPVD)
Implementation Method 4
substrate bias source configured to provide a potential necessary to thermalize and ionize the plasma
Data Source
AI summary
Embodiments of methods and systems for an inductively coupled plasma sweeping source for an IPVD system. In an embodiment, a method includes providing a large size substrate in a processing chamber. The method may also include generating from a metal source a sputtered metal onto the substrate. Additionally, the method may include creating a high density plasma from a high density plasma source and applying the high density plasma in a sweeping operation without involving moving parts. The method may also include controlling a plurality of operating variables in order to meet one or more plasma processing objectives.