Isolation Contact Structure for Leakage Control in 3D Memory
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Solution Overview
Problem
As semiconductor devices become increasingly integrated, they face challenges with leakage current, which affects their performance and reliability, and there is a need to enhance data storage capacity, particularly through three-dimensional memory cell arrangements.
Innovation Solution
The implementation of a semiconductor device design that includes an element isolation film with an isolation contact extending vertically, applying voltage to control leakage current, and a nonvolatile memory device structure with a channel structure intersecting word lines, where the isolation contact is used to form a potential barrier and improve data storage capacity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor devices are highly integrated to reduce size, then device density increases, but leakage current occurs
Solution Approach 1:
The semiconductor device is divided into isolated active regions by element isolation films. These films segment the continuous substrate into discrete functional regions, preventing leakage current from spreading between adjacent devices while maintaining high integration density.
Solution Approach 2:
Element isolation films act as intermediary structures between adjacent active regions. These films, composed of insulating materials, mediate the electrical isolation between densely packed devices, blocking leakage current paths without interfering with the functional operation of individual devices.
2Object-generated harmful factors
If element isolation film is used to control leakage current, then leakage current is reduced, but device complexity increases
Solution Approach 1:
The element isolation films are strategically positioned only where leakage current isolation is needed, specifically between adjacent active regions. This localized approach provides effective leakage control without adding unnecessary complexity to the entire device structure.
Solution Approach 2:
The element isolation films serve multiple functions simultaneously: they provide electrical isolation to prevent leakage current, define the boundaries of active regions, and support the overall device architecture. This multi-functionality reduces the need for additional specialized structures.
3Quantity of substance
If three-dimensional memory cell arrangement is implemented, then data storage capacity increases, but manufacturing precision requirements increase
Solution Approach 1:
The patent transitions from two-dimensional planar memory cell arrangements to three-dimensional vertically stacked structures. By utilizing the vertical dimension, the device achieves higher data storage capacity within the same footprint, accommodating more memory cells through multi-layer stacking.
Solution Approach 2:
The three-dimensional memory structure employs nested arrangements where multiple memory cell layers are stacked vertically, with each layer containing complete sets of word lines, bit lines, and memory cells. This nesting approach maximizes storage density by efficiently utilizing vertical space.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively controls leakage current, enhancing the reliability and performance of semiconductor devices and increasing data storage capacity by reducing isolation leakage and forming a potential barrier within the isolation region.
Implementation Method 1
the isolation contact is used to form a potential barrier and improve data storage capacity
Data Source
AI summary
A semiconductor device comprises a substrate; an element isolation film that defines a first active region in the substrate; a first gate electrode on the first active region; a first source/drain region located inside the first active region between the element isolation film and the first gate electrode; and an isolation contact that extends in a vertical direction intersecting an upper face of the substrate, in the element isolation film. The isolation contact is configured to have a voltage applied thereto.