Isolation Contact Layout for Leakage-Controlled Nonvolatile Memory
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Solution Overview
Problem
As semiconductor devices become increasingly integrated, they face challenges with leakage current, which affects their performance and reliability, and there is a need to enhance data storage capacity, particularly through controlling leakage current in semiconductor devices and nonvolatile memory devices.
Innovation Solution
The implementation of a semiconductor device design that includes an element isolation film with an isolation contact extending vertically, applying voltage to control leakage current, and a nonvolatile memory device with a specific substrate configuration to manage leakage current, improving reliability and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If semiconductor devices are highly integrated to increase data storage capacity, then data storage capacity is improved, but leakage current increases which worsens reliability and performance
Solution Approach 1:
The element isolation film is divided into multiple segments by forming isolation contacts that extend into the film, creating isolated regions that prevent leakage current from affecting the entire device. This segmentation allows high integration while maintaining reliability by containing leakage effects to specific localized areas.
Solution Approach 2:
Isolation contacts serve as intermediary conductive structures between the element isolation film and underlying layers, providing a controlled path for voltage application that suppresses leakage current without interfering with the active device regions. These intermediaries enable leakage control while preserving the high integration architecture.
2Quantity of substance
If component size is decreased to enable high integration, then data storage capacity is improved, but leakage current control becomes more difficult which worsens performance
Solution Approach 1:
The isolation contacts extend vertically into the element isolation film from the interlayer insulation film, utilizing the vertical dimension to implement leakage control mechanisms. This vertical extension allows leakage current suppression in miniaturized devices without requiring lateral space that would compromise integration density.
Solution Approach 2:
By applying different voltages to the isolation contacts through the etching blocking liner interface, the electrical parameters of the element isolation film are dynamically adjusted to suppress leakage current. This parameter control mechanism enables effective leakage management in small-sized components while maintaining high integration levels.
Data Source
AI summary
A semiconductor device comprises a substrate; an element isolation film that defines a first active region in the substrate; a first gate electrode on the first active region; a first source/drain region located inside the first active region between the element isolation film and the first gate electrode; and an isolation contact that extends in a vertical direction intersecting an upper face of the substrate, in the element isolation film. The isolation contact is configured to have a voltage applied thereto.