Isolation Impurity Layout for Leakage Control in Nonvolatile Memory
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Solution Overview
Problem
As semiconductor devices become increasingly integrated, they face challenges with leakage current, which affects performance and reliability, and there is a need for enhanced data storage capacity in nonvolatile memory devices.
Innovation Solution
A semiconductor device is designed with a first and second active region in a substrate, an element isolation layer to separate these regions, and an isolation impurity region with specific doping concentrations to reduce body effect and control leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If element isolation layer is used to separate active regions, then leakage current is reduced, but body effect increases
Solution Approach 1:
The patent applies local quality by creating a dual-structure isolation impurity region with different doping concentrations in different areas. The first isolation region has a first doping concentration while the second isolation region has a second doping concentration, allowing each region to perform its specific function optimally - one for leakage current prevention and the other for body effect reduction
Solution Approach 2:
The isolation impurity region is segmented into two distinct parts: a first isolation region and a second isolation region. This segmentation allows the patent to address both leakage current and body effect issues simultaneously by assigning different doping concentrations to different segments, rather than using a uniform structure
2Productivity
If active regions are arranged closely for high integration, then device density increases, but leakage current increases
Solution Approach 1:
The patent extends the isolation structure into the vertical dimension by creating an isolation impurity region that protrudes from the substrate surface. This third-dimensional approach allows effective leakage current blocking without increasing the lateral footprint, thereby maintaining high device integration density while preventing leakage
3Object-generated harmful factors
If isolation impurity region overlaps gate electrode, then leakage current is controlled, but manufacturing complexity increases
Solution Approach 1:
The patent implements partial overlap between the isolation impurity region and the gate electrode. The isolation impurity region protrudes to partially overlap the gate electrode in the vertical direction, providing sufficient leakage current control without requiring complete coverage that would increase manufacturing complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the performance and reliability of semiconductor devices by reducing body effect and preventing leakage current, while also increasing data storage capacity in nonvolatile memory devices.
Implementation Method 1
an isolation impurity region containing impurities of a first conductivity type in the substrate and disposed below the element isolation layer, in which the isolation impurity region includes a first isolation region and a second isolation region spaced apart from each other in the second direction
Data Source
AI summary
A semiconductor device includes a first active region and a second active region arranged along a first direction in a substrate, an element isolation layer extending in a second direction in the substrate to isolate the first active region and the second active region, a first gate electrode extending in the first direction on the first active region, a second gate electrode extending in the first direction on the second active region, and an isolation impurity region containing impurities of a first conductivity type in the substrate and disposed below the element isolation layer, in which the isolation impurity region includes a first isolation region and a second isolation region spaced apart from each other in the second direction, and at least a part of the substrate interposed between the first gate electrode and the second gate electrode is interposed between the first isolation region and the second isolation region.