Isolation Plate Through-Holes for Uniform Thin Film Deposition
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Solution Overview
Problem
Conventional substrate processing apparatuses fail to control the flow of processing gas uniformly, leading to non-uniform thin film thickness on substrates, which affects film quality and can result in defects.
Innovation Solution
A substrate processing apparatus with vertically spaced isolation plates that divide the processing space into multiple areas, featuring injection nozzles and exhaust ports at different heights, and through-holes in the isolation plates to control the flow of processing gas, ensuring uniform distribution and concentration on the substrate surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional substrate processing apparatus is used without flow control, then device complexity is low, but manufacturing precision of thin film thickness deteriorates
Solution Approach 1:
The isolation plates are designed with non-uniform through-hole distributions where the sum of effective areas of through-holes in the central portion differs from that in the outer portion. This local variation in hole area distribution creates different gas flow characteristics in different regions, enabling uniform thin film thickness across the substrate surface despite the relatively simple overall device structure.
Solution Approach 2:
The invention changes the parameter of through-hole effective area distribution on the isolation plates. By making the sum of effective areas of through-holes in the central portion different from that in the outer portion, the gas flow parameters are optimized to achieve uniform thin film deposition while maintaining a simple device structure without complex flow control mechanisms.
2Manufacturing precision
If multiple isolation plates with through-holes are added to control gas flow, then manufacturing precision of thin film thickness is improved, but device complexity increases
Solution Approach 1:
The processing chamber is divided into multiple processing spaces by vertically stacking multiple isolation plates. Each isolation plate contains through-holes that segment the gas flow path, allowing independent control of gas distribution in different vertical layers. This segmentation enables precise control of thin film thickness uniformity across multiple substrates processed simultaneously.
Solution Approach 2:
The isolation plates with through-holes act as intermediary components between the gas supply unit and the substrates. These plates mediate the gas flow distribution by selectively allowing gas to pass through controlled openings, thereby achieving uniform thin film deposition without requiring complex direct flow control mechanisms at each substrate position.
3Manufacturing precision
If through-holes are distributed uniformly across isolation plates, then device complexity is low, but manufacturing precision of gas flow distribution deteriorates
Solution Approach 1:
The through-holes are distributed with non-uniform effective areas across the isolation plates. Specifically, the sum of effective areas of through-holes in the central portion is designed to be different from that in the outer portion. This local quality variation compensates for natural gas flow patterns and achieves uniform gas flow distribution across the substrate surface.
Solution Approach 2:
The through-hole distribution exhibits asymmetric characteristics with respect to area summation between central and outer portions of the isolation plates. This asymmetric design counterbalances the asymmetric nature of gas flow from the supply nozzle, resulting in symmetric and uniform gas flow distribution over the substrate surface.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables the formation of a uniformly thick thin film on substrates, enhancing film quality and reducing defects by optimizing the flow and distribution of processing gases, thereby increasing the efficiency of the substrate processing process.
Implementation Method 1
the processing gas is supplied into the processing chamber through the processing gas supply nozzle. Thereafter, the processing gas injected from the processing gas supply nozzle passes between the substrates and introduced to the exhaust line through an exhaust port to form a thin film on the substrate
Implementation Method 2
an exhaust line for exhausting the inside of the processing chamber... while the inside of the processing chamber is exhausted through the exhaust line
Data Source
AI summary
Provided is a substrate processing apparatus including a tube having an inner space therein, a substrate supporting unit including a plurality of isolation plates configured to vertically stack a plurality of substrates thereon and divide a processing space, in which the plurality of substrates are processed, into a plurality of processing spaces in the tube, a gas supply unit configured to supply a processing gas to the plurality of substrates, and an exhaust unit disposed to face the gas supply unit to exhaust a gas inside the tube. A plurality of through-holes are defined in each of the isolation plates.