Remote plasma energizes process gases while the susceptor heats the substrate, enabling deposition below 400°C.
Segmented injector ports and baffles distribute raw, blocking, and purifying gases to resolve thickness uniformity contradictions across large-area substrates.
Through-holes in isolation plates control gas flow distribution to achieve uniform thin film thickness on substrates, resolving non-uniform deposition defects.
A CVD gas outlet element maintains a sufficient distance from the susceptor to block decomposition product diffusion.
A film formation apparatus uses a mist heating section with an inner surface coated in oxides or hydroxides to stabilize infrared radiation.