Low Temperature Epi Chamber with Conductive Susceptor
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Solution Overview
Problem
Conventional epitaxy systems operate at high temperatures, limiting their application to materials that can withstand such conditions and requiring a high thermal budget.
Innovation Solution
A low-temperature epitaxy growth system is developed, featuring a processing chamber with a susceptor for conductive heating, remote plasma sources for energizing process gases, and internal liners for thermal isolation, allowing for epitaxy deposition below 400°C.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high temperature operation is used for epitaxy, then deposition rate is improved, but thermal budget and energy consumption increase
Solution Approach 1:
The patent changes the temperature parameter from conventional high temperatures to low temperatures (below 400°C), fundamentally altering the process conditions. This is achieved by introducing a susceptor for conductive heating and remote plasma sources to energize process gases, enabling efficient epitaxy deposition at low temperatures while reducing thermal budget and energy consumption
Solution Approach 2:
The patent replaces conventional thermal field-based heating with a combination of conductive heating through susceptor and plasma-based gas energization. This substitution allows the process to achieve sufficient reaction kinetics without requiring high bulk temperatures, thereby reducing the thermal budget while maintaining productivity
2Productivity
If high temperature operation is used for epitaxy, then deposition rate is improved, but material selection is limited
Solution Approach 1:
By changing the temperature parameter to low temperatures, the patent expands material compatibility to include temperature-sensitive materials such as organic semiconductors, perovskites, and polymers that cannot withstand high temperatures, while still achieving adequate deposition rates through plasma activation and conductive heating
Solution Approach 2:
The patent introduces plasma as an intermediary to energize process gases at low temperatures, providing the necessary activation energy for deposition without requiring high substrate temperatures. This allows diverse materials to be deposited on temperature-sensitive substrates while maintaining productivity
3Use of energy by stationary object
If low temperature operation is used for epitaxy, then thermal budget is reduced, but adatom mobility decreases
Solution Approach 1:
The patent replaces thermal activation with plasma activation to enhance adatom mobility. Remote plasma sources energize process gases to produce reactive species that facilitate surface diffusion and incorporation at low temperatures, compensating for reduced thermal energy while maintaining deposition quality
Solution Approach 2:
The susceptor acts as an intermediary to provide localized conductive heating to the substrate, creating sufficient thermal energy at the substrate surface to maintain adatom mobility without requiring high bulk temperatures, thus reducing overall thermal budget while preserving deposition kinetics
4Use of energy by stationary object
If low temperature operation is used for epitaxy, then energy consumption is reduced, but deposition rate decreases
Solution Approach 1:
The patent merges multiple heating and activation mechanisms including conductive heating through susceptor, remote plasma activation, and inductively coupled plasma (ICP) to compensate for low temperature conditions. This combination provides sufficient reaction kinetics and adatom mobility to maintain high deposition rates while keeping overall energy consumption lower than conventional high-temperature processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system achieves efficient epitaxy deposition at low temperatures, compensating for lower growth rates by increasing gas/plasma temperature and adatom mobility, while reducing energy loss and preventing contamination.
Implementation Method 1
a susceptor disposed below the showerhead and operable to heat a substrate by conduction
Implementation Method 2
a remote plasma source disposed outside the dome lid and operable to energize a process gas
Implementation Method 3
generating Ar plasma in the EPI chamber via ICP coils
Data Source
AI summary
Disclosed herein is a processing chamber for a low temperature epitaxy deposition and components of the same. The processing chamber includes a dome lid coupled with a lid liner via a lid liner separator; a remote plasma source disposed outside the dome lid and operable to energize a process gas; a gas ring disposed under the dome lid and coupled with a gas ring liner via a gas ring liner separator; a showerhead disposed under the gas ring; a susceptor disposed below the showerhead and operable to heat a substrate by conduction; and a side wall disposed under the gas ring and coupled with a wall liner via a wall liner separator. The cleaning method of the processing chamber is also disclosed.