Chip-Scale Isolator With High-Permittivity Dielectric Layers
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Solution Overview
Problem
Chip-scale isolators face breakdown mechanisms due to increased local electric fields near electrodes, despite thicker dielectric layers, which can lead to electrical conduction and failure, especially when interfacing low and high voltage components in electronic circuits.
Innovation Solution
Incorporating layers of dielectric material with higher relative permittivity between and around the electrodes to reduce electric fields and increase breakdown voltage, using materials like silicon nitride, sapphire, or polyimide, and strategically placing these layers to enhance insulation and prevent dielectric breakdown.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a thicker layer of dielectric material is used between electrodes, then breakdown voltage increases, but local electric fields near electrodes still cause breakdown mechanisms in chip-scale isolators
Solution Approach 1:
The patent applies local quality by using different dielectric materials with different relative permittivities in different regions between the electrodes. Specifically, a first dielectric material with higher relative permittivity is used in regions closer to the electrodes where electric fields are strongest, while a second dielectric material with lower relative permittivity is used in regions farther from the electrodes. This spatial variation in material properties optimizes the electric field distribution and prevents breakdown mechanisms in chip-scale isolators.
2Volume of moving object
If chip-scale dimensions are used, then device size is reduced, but breakdown mechanisms occur due to increased local electric fields
Solution Approach 1:
The patent implements local quality by strategically placing dielectric materials with different permittivities in specific regions between the electrodes. The first dielectric material with higher relative permittivity is positioned in regions where electric field concentration is most problematic (near electrode edges and corners), while the second dielectric material with lower relative permittivity is used in other regions. This allows the device to maintain compact chip-scale dimensions while preventing breakdown mechanisms through optimized local electric field management.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of higher permittivity dielectric layers effectively increases the breakdown voltage and reduces the risk of electrical conduction near electrodes, enhancing the reliability of isolator devices in high-voltage applications by confining strong electric fields away from the lower permittivity dielectric layers.
Implementation Method 1
the second dielectric material has a higher relative permittivity than the first material
Data Source
AI summary
An isolator device and a corresponding method of forming the isolator device to include first and second electrodes, a layer of first dielectric material between the first and second electrodes, and at least one region of second dielectric material between the layer of first dielectric material and at least one of the first and second electrodes. The second dielectric material has a higher relative permittivity than the first dielectric material.