Isomeric C3/C4 Etching Gas for Selectivity and CD Control
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Solution Overview
Problem
Existing etching processes face challenges in achieving high etch selectivity and minimizing pattern hole distortion and critical dimension (CD) in semiconductor devices, which affect the integrity and performance of semiconductor patterns.
Innovation Solution
An etching gas composition comprising at least two C3 or C4 organic fluorine compounds and niobium fluoride, which are isomers, is used to improve etch selectivity and reduce pattern hole distortion, along with a substrate processing apparatus and pattern forming method that utilizes this composition to enhance pattern profile and reduce CD.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etching gas compositions are used, then etching process can be performed, but pattern hole distortion occurs and etch selectivity is insufficient
Solution Approach 1:
The patent uses a composite gas composition comprising multiple fluorinated organic compounds (C3-C6) with different molecular structures and reactivities. This composite approach allows synergistic effects where each compound contributes specific properties: some compounds enhance etch selectivity while others improve pattern profile and reduce hole distortion, achieving both goals simultaneously through material composition design
Solution Approach 2:
The patent optimizes the concentration ratios of different fluorinated organic compounds in the gas composition. By adjusting parameters such as the ratio of C3 to C6 compounds, and controlling their partial pressures during etching, the process achieves improved etch selectivity and reduced pattern hole distortion through precise parameter control
2Manufacturing precision
If etching process is performed to reduce CD, then pattern line critical dimension decreases, but pattern profile deteriorates
Solution Approach 1:
The patent employs fluorinated organic compounds with different reactivity profiles to achieve local optimization: certain compounds preferentially react at specific locations (such as sidewalls versus bottom of patterns) to maintain vertical profile while enabling CD reduction. This spatially selective etching behavior improves both CD control and pattern profile quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The etching gas composition effectively improves pattern hole distortion and reduces CD, enhancing the electrical characteristics and functional reliability of semiconductor devices by maintaining high etch selectivity and profile quality.
Implementation Method 1
etching the layer to be etched through the etching mask by using plasma obtained from an etching gas composition
Data Source
AI summary
An etching gas composition includes at least two C3 or C4 organic fluorine compounds and niobium fluoride, and the at least two C3 or C4 organic fluorine compounds are isomers.