Surface Treatment Compositions TRIZ Cases

A tungsten corrosion inhibitor enables selective etching of titanium-containing films while protecting metal tungsten in memory substrate fabrication.

A tuned oxidizer, pH agent, and chelating booster etches TiAlN quickly while protecting the gate insulating layer.

Moderating particles control acid exudates and conductivity in dry electropolishing, preventing craters and undulations on metal surfaces.

Gas-phase phosphoric acid derivatives selectively remove nitride in V-NAND and DRAM stacks while avoiding capillary collapse and poor isotropicity.

An amine-based aqueous etchant removes silicon while preserving n-doped silicon, improving selectivity without slowing silicon etch rates.

An acid etchant with etch and deposition inhibitors improves silicon nitride selectivity while limiting silica buildup on silicon oxide.

Specific organic solvents replace NMP in iodine-iodide gold etchants to improve wettability, fine patterning, and solution life.

A fluoride-based etch composition removes metal oxides at high rates while protecting silicon nitride layers through a nitride inhibitor.

Adjustable spacing between two masks controls etching width, improving foldable glass window reliability without sacrificing process efficiency.

A nearly water-free alkaline etch in high-boiling organic solvent speeds glass structuring while limiting damage, residue, and precipitation.

A low-permittivity fluoride-organic acid etchant selectively removes SiGe while reducing center-to-edge dissolution variation.

A fluorosilicic acid and HF composition improves ultra-thin glass etch uniformity and speed while maintaining consistent HF concentration.

An alkyl silane in phosphoric acid selectively etches silicon nitride while protecting silicon oxide and suppressing foam at elevated temperatures.

A tuned persulfate acid etchant controls interfacial permeation to improve multilayer film etch uniformity and reduce pores and residues.

A tuned peroxide-fluorine etchant improves multilayer metal wiring profiles while reducing upper-layer damage and lower-layer undercut.

Using 30–100 wt% potassium hydroxide at 130°C or higher, the process reduces aluminosilicate glass roughness and haze.

A balanced acid, sulfate, and organic sulfur formulation selectively etches silver layers while limiting over-etching and film damage.

A mixed gas of isomeric C3/C4 organic fluorine compounds and niobium fluoride targets etch selectivity, hole distortion, and CD.

A formulated etchant improves uniformity on indium oxide and silver films while limiting residue.

Persulfate-based chemistry with a tip control index of 45–70 supports uniform multilayer-film etching and suitable taper angles.

A hydrofluoric acid composition with boron or phosphite compounds improves nitride selectivity and stability at lower temperatures.

A low-pH etching process creates controlled polyhedral glass features that improve reflective appearance and tactile impression.

A mixed acid etching solution removes indium-containing oxide and silver layers to form patterned sub-layers.

A chemical etchant composition uses specific persulfate and sulfonic acid concentrations to maintain copper wire straightness during processing.

A silicon etchant combines tetramethylammonium hydroxide with strongly basic amines to maintain high etching rates.

Replacing toxic inorganic acids with organic acids and ultrasonic vibration eliminates harmful emissions while maintaining high polishing rates.