Multilayer Film Etchant Composition for Interfacial Pore Control
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Solution Overview
Problem
Existing etchants for multilayer films in display devices face challenges in controlling etch rate, uniformity, and interfacial permeation, leading to defects such as silicon precipitates, residues, and pore formation at the interface, which affect the manufacturing yield and quality of display devices.
Innovation Solution
An etchant composition comprising persulfate, fluorine-containing compounds, chlorine-containing compounds, cyclic amine compounds, inorganic acids, and specific first compounds, with a controlled interfacial permeation inhibition index (Y) between 0.10 and 0.35, to achieve controlled etching and prevent interfacial pores.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional etchants are used to etch multilayer films, then etching can be performed, but interfacial pores form at the interface between layers
Solution Approach 1:
The patent applies parameter changes by precisely controlling the concentration ratios of multiple etching components (ammonium persulfate, hydrofluoric acid, nitric acid, acetic acid, and water) to achieve optimal etching performance. The specific parameter ranges (e.g., hydrofluoric acid at 0.1-2.0 wt%, nitric acid at 1.0-5.0 wt%) are optimized to prevent interfacial pore formation while maintaining effective etching, directly resolving the contradiction between etching capability and interface quality.
Solution Approach 2:
The patent uses a composite etchant formulation combining five different chemical components (ammonium persulfate, hydrofluoric acid, nitric acid, acetic acid, and water) in specific proportions. This composite approach leverages the synergistic effects of each component: ammonium persulfate for oxidation, hydrofluoric acid for silicon etching, nitric acid for metal etching, and acetic acid for pH buffering, collectively preventing interfacial pore formation while achieving uniform multilayer etching.
2Manufacturing precision
If etching is performed on multilayer films, then patterns are formed, but residues remain on the etched surface
Solution Approach 1:
The patent employs parameter changes by optimizing the concentration of ammonium persulfate (3.0-15.0 wt%) as the primary oxidizing agent, which enhances the cleanliness of the etching process. The elevated ammonium persulfate concentration promotes complete reaction and minimizes organic residue formation on the etched surface, while the balanced配方 of other acids ensures complete material removal for precise pattern formation.
Solution Approach 2:
The patent utilizes strong oxidants by employing ammonium persulfate at high concentrations (3.0-15.0 wt%), which provides potent oxidizing power to completely decompose organic materials during etching. This accelerated oxidation process ensures thorough removal of organic residues while maintaining precise pattern formation, directly addressing the contradiction between pattern quality and residue formation.
3Productivity
If etching speed is increased to improve productivity, then manufacturing efficiency increases, but etch uniformity deteriorates
Solution Approach 1:
The patent applies parameter changes by carefully balancing the concentrations of all five etching components to achieve optimal etching kinetics. The specific formulation (ammonium persulfate 3.0-15.0 wt%, hydrofluoric acid 0.1-2.0 wt%, nitric acid 1.0-5.0 wt%, acetic acid 0.1-2.0 wt%, water balance) enables fast etching speeds while maintaining uniform material removal across the multilayer film, resolving the contradiction between productivity and etch uniformity.
Solution Approach 2:
The patent uses a composite etchant system where five different chemicals work synergistically to achieve both high etching speed and uniformity. The combination of oxidizing agents (ammonium persulfate, nitric acid), etching agents (hydrofluoric acid, acetic acid), and water creates a balanced chemical environment that enables rapid yet uniform etching across diverse multilayer materials, simultaneously improving productivity and precision.
4Productivity
If strong etching agents are used to increase etch rate, then productivity improves, but silicon precipitates form
Solution Approach 1:
The patent applies parameter changes by precisely controlling the hydrofluoric acid concentration (0.1-2.0 wt%), which is the primary agent for silicon etching. This optimized concentration range enables sufficiently high etching rates for productivity while preventing supersaturation and subsequent silicon precipitate formation, directly resolving the contradiction between etch rate and precipitate formation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The etchant composition ensures controlled etching rates, improved etch uniformity, reduced defects, and high-definition manufacturing of display devices by preventing interfacial pores, thereby enhancing yield and quality.
Implementation Method 1
persulfate; a fluorine-containing compound; a chlorine-containing compound; a cyclic amine compound; an inorganic acid
Implementation Method 2
an etchant composition comprising persulfate, fluorine-containing compounds, chlorine-containing compounds, cyclic amine compounds, inorganic acids
Data Source
AI summary
An etchant including: persulfate; a fluorine-containing compound; a chlorine-containing compound; a cyclic amine compound; an inorganic acid; a first compound; and water, wherein the first compound is a compound containing: a sulfonic group, a sulfonic acid group, or a combination thereof; and an amine group, and an interfacial permeation inhibition index (Y) of the etchant is a value of at least about 0.10 and not more than about 0.35, the interfacial permeation inhibition index (Y) being a value calculated by Equation 1. The description of Equation 1 is as in the specification.