SiGe Treatment Liquid for Uniform Selective Dissolution
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Solution Overview
Problem
Existing etching solutions for silicon-germanium-containing substances exhibit variations in dissolution rates between the central and end portions, leading to improper shape formation during circuit and element fabrication.
Innovation Solution
A treatment liquid comprising a fluoride ion source, organic acid, oxidant, solvent with a relative permittivity of 10 or less, and water, with specific mass and permittivity ratios, is used to selectively dissolve silicon-germanium-containing substances while minimizing variations in dissolution rates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etching solutions are used to remove silicon-germanium-containing substances, then the silicon-germanium-containing substance can be removed, but variation in dissolution rate occurs between central portion and end portion leading to improper shape formation
Solution Approach 1:
The patent changes the chemical parameters of the etching solution by specifying precise concentrations of hydrogen fluoride (0.01-5 wt%), hydrogen peroxide (1-20 wt%), and ammonium fluoride (0.01-5 wt%). These parameter adjustments optimize the dissolution characteristics to achieve uniform etching across the substrate surface while maintaining high manufacturing precision.
Solution Approach 2:
The patent employs a composite chemical system combining multiple etching agents (hydrogen fluoride, hydrogen peroxide, ammonium fluoride) that work synergistically. This composite approach enables simultaneous achievement of high dissolution rate and uniform dissolution distribution, resolving the contradiction between removal efficiency and shape formation precision.
2Productivity
If high concentration of etching agents is used to improve dissolution rate, then removal efficiency increases, but variation in dissolution rate between central and end portions worsens
Solution Approach 1:
The patent optimizes the concentration parameters of etching agents within specific ranges: hydrogen fluoride (0.01-5 wt%), hydrogen peroxide (1-20 wt%), and ammonium fluoride (0.01-5 wt%). These controlled parameter changes enable high removal efficiency while preventing excessive dissolution rate variation that would compromise shape formation precision.
Solution Approach 2:
The patent uses ammonium fluoride as a buffering agent that replicates and stabilizes the etching environment throughout the solution. This buffering mechanism ensures uniform dissolution conditions across different regions of the substrate, maintaining manufacturing precision even at high removal efficiency levels.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The treatment liquid effectively and uniformly dissolves silicon-germanium-containing substances, ensuring consistent shape formation by reducing variations in dissolution rates across the substrate.
Implementation Method 1
a fluoride ion source
Implementation Method 2
an oxidant
Implementation Method 3
a solvent having a relative permittivity of 10 or less
Data Source
AI summary
An object of the present invention is to provide a treatment liquid which, in a case of being applied to an object to be treated containing a silicon-germanium-containing substance and a silicon-containing substance, selectively dissolves the silicon-germanium-containing substance and suppresses a variation in a dissolution rate between a central portion and an end portion in the silicon-germanium-containing substance. The treatment liquid of the present invention is a treatment liquid used for an object to be treated, which contains a silicon-germanium-containing substance and a silicon-containing substance, to remove at least a part of the silicon-germanium-containing substance, the treatment liquid containing a fluoride ion source, an organic acid, an oxidant, a solvent having a relative permittivity of 10 or less, and water, in which a content of the water is more than 0% by mass and less than 30% by mass with respect to the total mass of the treatment liquid.