Lanthanide Dielectric with Silicate Passivation for Leakage Control
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Solution Overview
Problem
Scaling dielectric layers beyond 2 nm using silicon dioxide leads to large leakage currents due to direct tunneling, and alternative high-k dielectrics like hafnium or zirconium oxides exhibit poor thermal stability and high interface state densities, causing mobility degradation and reliability concerns in field effect transistor devices.
Innovation Solution
Formation of a lanthanide dielectric film with controlled interfaces using a passivation layer of silicon, oxygen, and nitrogen, and an encapsulation layer to stabilize the interface and prevent reactivity, which includes using tools like MOCVD, ALD, and e-beam evaporation to achieve higher thermal stability and reduced leakage currents.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If silicon dioxide is scaled beyond 2 nm, then device miniaturization is achieved, but leakage current increases due to direct tunneling
Solution Approach 1:
The patent changes the dielectric constant parameter from SiO2 (K~3.9) to high-k materials (K>15), allowing thicker physical layers to achieve the same electrical thickness, thereby reducing tunneling leakage while maintaining electrical performance
Solution Approach 2:
The patent uses composite structures combining high-k dielectric materials with silicon substrates, and further composites high-k materials with silicate layers to achieve both low leakage and good interface characteristics
2Quantity of substance
If high-k dielectrics like hafnium or zirconium oxides are used, then dielectric constant increases, but thermal stability deteriorates and interface state density increases
Solution Approach 1:
The patent creates composite structures with silicate layers combined with high-k materials, where the silicate provides thermal stability and the high-k material provides high dielectric constant, achieving both properties simultaneously
Solution Approach 2:
The patent introduces silicate layers as intermediary layers between the high-k dielectric and silicon substrate, which mediate the interface to reduce state density while maintaining thermal stability
3Quantity of substance
If high-k dielectrics are used directly on silicon substrate, then dielectric constant increases, but interface state density increases causing mobility degradation
Solution Approach 1:
The patent introduces silicate layers as intermediary layers between the high-k dielectric and silicon substrate, which mediate the interface to reduce state density while maintaining thermal stability
Solution Approach 2:
The patent applies different material compositions at different locations: silicate layers at the interface region for low state density, and high-k materials in the bulk for high dielectric constant
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The lanthanide dielectric film achieves superior leakage characteristics, higher thermal stability, and improved electron mobility, with effective electron mobility greater than 500 cm2/V-sec and reduced threshold instability, enabling high-performance logic circuits and memory cells.
Implementation Method 1
forming a passivation layer on a substrate, wherein the passivation layer contains a composition of silicon, oxygen, and nitrogen
Implementation Method 2
Scaling dielectric layers, including silicon dioxide (SiO2) beyond 2 nm gives rise to large leakage current due to direct tunneling
Implementation Method 3
forming a lanthanide dielectric film on the passivation layer
Data Source
AI summary
Methods and devices for a dielectric are provided. One method embodiment includes forming a passivation layer on a substrate, wherein the passivation layer contains a composition of silicon, oxygen, and nitrogen. The method also includes forming a lanthanide dielectric film on the passivation layer, and forming an encapsulation layer on the lanthanide dielectric film.