Large-Scale PECVD Graphene Coating of Particles with Flake Control

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Solution Overview

Problem

Existing methods face challenges in producing high-quality graphene on a large scale and efficiently coating or encapsulating particles with graphene, lacking control over quality parameters such as size and orientation of graphene flakes.

Innovation Solution

A continuous or semi-continuous process using plasma enhanced chemical vapor deposition (PECVD) directly deposits graphene on particles without pre-treatment, operating at lower temperatures and allowing for controlled orientation and thickness of graphene flakes, with a production unit that enables efficient harvesting and recirculation of particles.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If conventional CVD or PECVD methods are used to produce graphene, then graphene can be formed on substrates, but the production scale is limited and quality parameters such as flake size and orientation cannot be controlled

Engineering Contradiction:
Improveproduction scaleVSAvoidcontrol over graphene quality parameters
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent introduces a rotating substrate holder that allows substrates to rotate during the PECVD process. This dynamic movement enables uniform exposure of all substrate surfaces to the plasma and carbon source, facilitating large-scale production while maintaining consistent graphene quality parameters including flake size and orientation control across the entire substrate surface.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent implements a continuous PECVD process where carbon-containing gas is continuously supplied and plasma is continuously generated during substrate rotation. This continuous action allows for large-area graphene deposition in a single process run, improving productivity while maintaining uniform quality parameters through sustained plasma exposure and controlled deposition conditions.

Inventive Principle:
Principle #20Continuity of useful action

2Productivity

If high-quality graphene is produced on large scale, then productivity increases, but control over quality parameters such as size and orientation of graphene flakes deteriorates

Engineering Contradiction:
Improvelarge-scale productionVSAvoidcontrol over size and orientation of graphene flakes
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies different process conditions to different regions of the substrate by controlling plasma distribution and carbon source flow patterns during substrate rotation. This allows optimization of local graphene properties such as flake size and orientation in specific areas while maintaining overall high-quality production across the entire large-scale substrate surface.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent employs precise control of process parameters including plasma power, gas flow rates, temperature, and rotation speed to maintain consistent graphene quality parameters during large-scale production. By dynamically adjusting these parameters, the process achieves both high productivity and uniform control over graphene flake size and orientation across large substrate areas.

Inventive Principle:
Principle #35Parameter changes

3Manufacturing precision

If PECVD is used for graphene deposition, then graphene quality is improved, but the process complexity and equipment requirements increase

Engineering Contradiction:
Improvegraphene qualityVSAvoidprocess complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent designs a PECVD system with a rotating substrate holder that can accommodate multiple substrate types and configurations. The same basic apparatus can produce graphene on flat substrates, curved surfaces, or arrays of substrates by adjusting rotation parameters, thereby reducing overall device complexity while maintaining high graphene quality through the universal applicability of the plasma exposure mechanism.

Inventive Principle:
Principle #6Universality (Multi-functionality)

4Area of moving object

If graphene is deposited on particles, then surface area and functionality are enhanced, but the process requires additional steps for particle handling and recirculation

Engineering Contradiction:
Improvesurface area of particlesVSAvoidparticle handling and recirculation system
Core Design Contradiction:
Area of moving objectVSDevice complexity

Solution Approach 1:

The patent implements an automatic particle recirculation system where particles that have been used as substrates for graphene deposition are automatically collected, returned to the PECVD chamber, and reused without manual intervention. This self-service approach allows continuous particle circulation, maximizing surface area utilization for graphene production while minimizing the complexity of particle handling through automated closed-loop operation.

Inventive Principle:
Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This process achieves high-quality graphene-coated particles with controlled properties, reducing emissions and improving scalability, enabling efficient large-scale production with enhanced control over graphene quality and surface area, suitable for various materials including metals, metal oxides, and non-metals.

Implementation Method 1

a continuous or semi-continuous process for the production of graphene, where particles comprising a core are introduced into a stationary deposition chamber where they are subjected to plasma enhanced chemical vapor deposition (PECVD) using a carbon-containing gas, forming solid graphene directly on the surface of said particles

Methodology Applied
Scientific EffectPlasma enhanced chemical vapor deposition: Plasma Enhanced Chemical Vapour Deposition

Data Source

PatentUS20250270092A1Process and device for large-scale production of graphene
Publication Date: 2025.08.28 CEALTECH AS
  • US20250270092A1 patent drawing
  • US20250270092A1 patent drawing
  • US20250270092A1 patent drawing

AI summary

A process for large-scale production of graphene comprising a step of applying graphene onto a movable surface carrying multiple particles using a PECVD-based process operating at low temperatures enabling the coating of materials that are at risk of melting, decomposing or deforming at higher temperatures. The graphene can be separated from said particles, and the particles re-circulated in the process. A production unit designed for continuous or semi-continuous large-scale production of graphene and graphene-coated particles, where said graphene-coated particles are either the desired end-product, or an intermediate. Graphene-coated particles, in particular particles where the graphene forms flakes having a desired orientation in relation to a surface of said particles.