Laser Substrate Bonding and Peripheral Removal Without Powder
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in efficiently bonding and processing substrates, particularly in trimming and grinding, which often result in the generation of powder and potential overpolishing or incomplete removal of peripheral portions, leading to increased processing time and labor.
Innovation Solution
A semiconductor manufacturing apparatus that includes a reformer for forming a reformed layer between substrate portions, a joiner for creating a joining layer, and a remover for separating and removing the peripheral portion of the upper substrate while maintaining the central portion on the lower substrate, using lasers to form amorphous and dehydration condensation layers, respectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If substrates are processed by trimming or grinding, then the peripheral portions can be removed, but powder is generated and overpolishing or incomplete removal may occur
Solution Approach 1:
The invention changes the processing method from mechanical trimming/grinding to laser processing, altering the physical parameter of the removal mechanism. The laser forms an amorphous layer and dehydration condensation layer, completely removing material without generating powder, thus resolving the contradiction between removal precision and powder generation
Solution Approach 2:
The invention replaces the mechanical trimming/grinding system with a laser-based processing system. The laser beam substitutes mechanical contact, eliminating powder generation while maintaining precise removal of peripheral portions through controlled thermal processing
2Productivity
If mechanical trimming or grinding is used, then processing can be performed, but processing time and labor increase
Solution Approach 1:
The laser processing system replaces time-consuming mechanical trimming and grinding operations. The laser can rapidly process substrates without the need for multiple mechanical steps, significantly reducing processing time and improving productivity
Solution Approach 2:
The laser processing enables continuous removal of peripheral portions in a single operation, whereas mechanical methods require multiple discrete steps (trimming, then grinding). This continuous action reduces total processing time and enhances productivity
3Ease of manufacture
If substrates are bonded together, then device manufacturing is enabled, but peripheral portion removal becomes difficult
Solution Approach 1:
The invention segments the substrate into a central portion and peripheral portions through laser processing. The peripheral portions are selectively removed while the central portion remains bonded, enabling easy separation of unwanted areas without affecting the bonded device structure
Solution Approach 2:
The laser processing parameters are controlled to selectively remove peripheral portions of bonded substrates. The amorphous layer formation and dehydration condensation enable precise material removal from the peripheral areas while preserving the bonded central region
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for efficient removal of the peripheral portion without converting it into powder, reducing processing time and labor, and ensuring strong bonding between substrates while preventing overpolishing and incomplete removal issues.
Implementation Method 1
a reformer configured to partially reform a first substrate to form a reformed layer between a first portion and a second portion in the first substrate
Implementation Method 2
When a semiconductor device is manufactured by bonding substrates with each other, the substrates are often processed by, for example, trimming or grinding
Implementation Method 3
a joiner configured to form a joining layer between the first portion and a second substrate to join the first portion and the second substrate
Implementation Method 4
The apparatus further includes a remover configured to remove the second portion from a surface of the second substrate while making the first portion remain on the surface of the second substrate by separating the first portion and the second portion
Data Source
AI summary
In one embodiment, a semiconductor manufacturing apparatus includes a reformer configured to partially reform a first substrate to form a reformed layer between a first portion and a second portion in the first substrate. The apparatus further includes a joiner configured to form a joining layer between the first portion and a second substrate to join the first portion and the second substrate. The apparatus further includes a remover configured to remove the second portion from a surface of the second substrate while making the first portion remain on the surface of the second substrate by separating the first portion and the second portion.