Laser Transfer of 2D Materials for Clean Patterned Deposition

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Solution Overview

Problem

Existing methods for depositing two-dimensional (2D) materials on electronics involve complex processing steps that risk impurity contamination, substrate destruction, and poor pattern control, increasing fabrication costs and complexity.

Innovation Solution

A laser-induced forward transfer (LIFT) method that uses a vacuum chamber to regulate pressure and a laser to transfer 2D materials like graphene, MoS2, and h-BN onto substrates with precise control over pattern and layering, eliminating the need for masks and reducing energy consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If chemical vapor deposition (CVD) is used to deposit 2D materials, then material deposition is achieved, but multiple time-consuming processing steps increase device fabrication complexity and risk of impurity contamination

Engineering Contradiction:
Improvepurity of deposited 2D materialVSAvoidfabrication process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent extracts and eliminates the intermediate transfer steps (polymer stamp, metal foil, chemical solutions) from the deposition process. By using direct laser-induced forward transfer, the 2D material is deposited directly onto the target substrate without requiring removal of support layers or temporary carriers, thereby reducing process complexity and impurity contamination risks.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent introduces a donor substrate as an intermediary carrier that holds the 2D material during transfer. This donor substrate enables direct transfer of 2D material to the target substrate without requiring complex intermediate manipulation steps, simplifying the overall process while maintaining material purity.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If wet-transfer/deposition methods are used, then 2D material transfer is achieved, but chemical solutions risk destroying the substrate and require high-temperature annealing to remove solvent residues

Engineering Contradiction:
Improveintegrity of substrateVSAvoidannealing temperature
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The patent converts the potential harm of direct laser irradiation on the substrate into a benefit by using the laser to induce forward transfer of 2D material from the donor substrate. The laser energy is precisely controlled to transfer material without damaging the target substrate, eliminating the need for high-temperature annealing required in wet-transfer methods to remove solvent residues.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

The patent replaces the chemical-mechanical wet-transfer process with a laser-induced forward transfer process. Instead of using chemical solutions for material transfer and subsequent thermal processing to remove residues, the method uses controlled laser irradiation to directly deposit material, eliminating both chemical and thermal damage risks.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

3Manufacturing precision

If photolithography is used to achieve well-defined printed patterns, then pattern control is improved, but fabrication cost increases and impurity insertion risk increases during polymer photoresist removal

Engineering Contradiction:
Improvepattern definition accuracyVSAvoidfabrication cost
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent extracts and eliminates the photolithography process (photoresist coating, patterning, and removal steps) from the fabrication workflow. By using laser-induced forward transfer with direct digital patterning, the method achieves precise pattern definition without requiring expensive photoresist materials or complex lithography equipment, thereby reducing fabrication costs and impurity insertion risks.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent uses the laser beam as a digital template that directly copies the desired pattern onto the target substrate through controlled irradiation. This digital patterning approach replaces physical photoresist masks and enables precise pattern transfer without the need for costly lithography processes or subsequent photoresist removal steps.

Inventive Principle:
Principle #26Copying

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The LIFT method enables precise, efficient, and cost-effective deposition of 2D materials with clean interfaces, allowing for the fabrication of devices such as flexible touch sensors and field-effect transistors with high resolution and reduced engineering time.

Implementation Method 1

irradiating the coating through the back surface of the donor substrate with one or more laser pulses produced by the laser to transfer a portion of the donor material to the target layer

Methodology Applied
Scientific EffectLaser-induced forward transfer: Laser Ablation

Data Source

PatentUS12590372B2Laser induced forward transfer of 2D materials
Publication Date: 2026.03.31 GRAPHENEA SEMICON S L U
  • US12590372B2 patent drawing
  • US12590372B2 patent drawing
  • US12590372B2 patent drawing

AI summary

A system and method for performing is laser induced forward transfer (LIFT) of 2D materials is disclosed. The method includes generating a receiver substrate, generating a donor substrate, wherein the donor substrate comprises a back surface and a front surface, applying a coating to the front surface, wherein the coating includes donor material, aligning the front surface of the donor substrate to be parallel to and facing the receiver substrate, wherein the donor material is disposed adjacent to the target layer, and irradiating the coating through the back surface of the donor substrate with one or more laser pulses produced by a laser to transfer a portion of the donor material to the target layer. The donor material may include Bi2Se(3-x)Sx, MOS2, hexagonal boron nitride (h-BN) or graphene. The method may be used to create touch sensors and other electronic components.