Semiconductor Laser Waveguide Thermal Management
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Solution Overview
Problem
The challenge in semiconductor laser devices is that multiple waveguide structures with horn-shaped ridges on a shared substrate experience thermal interference, leading to high temperatures, uneven light output, and instability in the light emitting pattern due to heat conduction between adjacent structures.
Innovation Solution
A semiconductor laser device design that incorporates a divider with a groove between waveguide structures, filled with a high-thermal-conductivity material to dissipate heat and minimize temperature differences between them, thereby suppressing thermal interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple waveguide structures are disposed on the same substrate to increase light output, then the light output can be theoretically increased in proportion to the number of waveguide structures, but thermal interference occurs between adjacent waveguide structures causing temperature to exceed operating temperature and reducing light output
Solution Approach 1:
The invention divides the substrate into multiple independent regions by forming dividers between adjacent waveguide structures. Each waveguide structure is isolated in its own region, preventing thermal interference while maintaining the ability to operate multiple structures simultaneously for increased light output
Solution Approach 2:
The divider acts as an intermediary element between adjacent waveguide structures. It includes a heat dissipation portion that conducts heat away from the waveguide structures, and an insulating portion that prevents heat transfer between adjacent structures, thereby controlling temperature while allowing multiple structures to operate
2Productivity
If multiple waveguide structures are disposed on the same substrate, then high output can be achieved, but temperature difference is generated between waveguide structures causing uneven light output and instability in light emitting pattern
Solution Approach 1:
By segmenting the substrate into separate regions with dividers, each waveguide structure operates in an isolated thermal environment. This prevents temperature differences between structures, ensuring uniform light output and stable light emitting patterns while maintaining high overall output
Solution Approach 2:
The heat dissipation portion of the divider conducts heat to equalize temperature across different regions, creating a thermal equipotential state. This reduces temperature differences between waveguide structures, ensuring uniform operating conditions and stable light emitting patterns
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration ensures stable light emitting patterns and high output by maintaining waveguide structures at a consistent temperature, reducing thermal interference and enhancing heat dissipation.
Implementation Method 1
a heat dissipation material filled in the groove and having a thermal conductivity higher than a thermal conductivity of the semiconductor layer
Data Source
AI summary
The present invention provides a semiconductor laser device for improving temperature characteristics of waveguide structures and realizing stable light emitting patterns and high output, and a method for making the same. The semiconductor laser device (1) comprises: an n-type clad layer (5) laminated on a substrate (2); an active layer (6) laminated on the n-type clad layer (5); a p-type clad layer (7) laminated on the active layer (6); and a plurality of waveguide structures (8) formed on the p-type clad layer (7) and having a ridge of a horn shape in top view. In this configuration, a divider (29) is formed between adjacent waveguide structures (8), and the divider (29) comprises: a groove (30) dividing the active layer (6); and a heat dissipation material (34) filled in the groove (30) and having a thermal conductivity higher than a thermal conductivity of a semiconductor layer (4).