3D Lateral Channel Semiconductor Device for Integration Density
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Solution Overview
Problem
Current methods for manufacturing 3D semiconductor devices with vertical pillars face challenges such as complex fabrication processes, increased aspect ratios, and structural instability, which can lead to misalignment and process defects during the formation of switching devices.
Innovation Solution
A semiconductor device with a 3D lateral channel structure is developed, featuring a line-shaped common source node electrically coupled to the source region and extending parallel to the gate electrodes, reducing the need for complex alignment and oxidation control, and stabilizing current discharge through a self-aligned formation process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a vertical pillar structure is used for switching devices, then integration density can be improved, but the fabrication process becomes complex and the aspect ratio increases leading to structural instability
Solution Approach 1:
The patent inverts the conventional vertical pillar structure by adopting a lateral channel structure where the channel extends horizontally rather than vertically. This inversion simplifies the fabrication process by eliminating the need for complex vertical alignment while maintaining 3D integration benefits through the lateral fin structure that extends in the vertical direction.
Solution Approach 2:
The patent transitions from a purely vertical 3D structure to a lateral channel structure that utilizes both horizontal and vertical dimensions. The lateral fin structure extends vertically to maintain integration density while the channel runs horizontally, effectively using another dimension to resolve the contradiction between vertical integration and fabrication simplicity.
2Productivity
If a vertical pillar structure is used for switching devices, then integration density can be improved, but the aspect ratio increases causing structural instability
Solution Approach 1:
The patent inverts the vertical pillar approach by using a lateral channel structure where the load-bearing elements (lateral fins) extend vertically while the channel runs horizontally. This inversion maintains the vertical dimension for integration density while distributing mechanical stress more effectively through the lateral fin structure, reducing the aspect ratio problem and improving structural stability.
3Reliability
If alignment processes are used to couple the channel with the common source node, then electrical coupling can be achieved, but process defects such as misalignment may occur
Solution Approach 1:
The lateral fin structure inherently provides the electrical coupling between the channel and the common source node through its geometric configuration. The self-aligned nature of the lateral fin structure eliminates the need for separate alignment processes, as the structure automatically ensures proper electrical connection while maintaining manufacturing precision.
4Reliability
If gate alignment with the channel is performed, then proper electrical operation can be achieved, but process defects such as misalignment may occur
Solution Approach 1:
The lateral fin structure provides self-alignment between the gate and the channel through its geometric configuration. The horizontal channel and vertical lateral fin structure naturally guide the gate placement, eliminating the need for complex alignment processes and reducing misalignment defects while ensuring proper electrical operation.
Data Source
AI summary
A 3D semiconductor device and a method of manufacturing the same are provided. The 3D semiconductor device includes a semiconductor substrate, an insulating layer formed on the semiconductor substrate, an active line including a source region and a drain region formed on the insulating layer, a gate electrode located on a portion of the active line, corresponding to a region between the source region and the drain region, and extending to a direction substantially perpendicular to the active line, and a line-shaped common source node formed to be electrically coupled to the source region and extending substantially in parallel to the gate electrode in a space between gate electrodes.