Lateral Epitaxial Semiconductor Structure for Extended Crystallization
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Solution Overview
Problem
Conventional lateral solid-phase epitaxy processes are limited by the effective distance for crystallization over dielectric layers, hindering the formation of seamless single-crystal semiconductor structures.
Innovation Solution
A method involving the formation of a semiconductor layer with sections and semiconductor regions that project from one another, separated by a dielectric layer, followed by a lateral solid-phase epitaxy process to convert amorphous semiconductor materials to single-crystal materials, enabling extended crystallization beyond conventional limits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of stationary object
If conventional lateral solid-phase epitaxy processes are used, then crystallization can occur over dielectric layers, but the effective distance for crystallization is limited
Solution Approach 1:
The patent divides the crystallization process into multiple segments by introducing intermediate semiconductor layers with different crystal orientations between the amorphous semiconductor layer and the dielectric layer. These intermediate layers act as separate crystallization stages, each contributing to the overall extension of the effective crystallization distance while maintaining reliable single-crystal quality throughout the structure.
Solution Approach 2:
The patent changes the crystal orientation parameters of intermediate semiconductor layers to optimize crystallization propagation. By selecting specific crystal orientations for intermediate layers, the process enables crystallization to propagate over extended distances while maintaining the reliability and quality of the single-crystal structure, overcoming the conventional distance limitation.
2Length of stationary object
If the lateral growth distance is extended beyond conventional limits, then seamless single-crystal semiconductor layers can be formed, but conventional processes cannot achieve this
Solution Approach 1:
The patent segments the lateral growth process into multiple controlled stages using intermediate semiconductor layers. Each segment represents a manageable crystallization step that can be independently controlled and optimized, making the overall extended lateral growth process feasible while achieving seamless single-crystal structures.
Solution Approach 2:
The patent introduces intermediate semiconductor layers as mediators between the amorphous semiconductor material and the final single-crystal structure. These intermediary layers facilitate the transition over extended distances by providing intermediate crystallographic pathways, making the extended lateral growth process manufacturable while maintaining material quality.
3Area of stationary object
If amorphous semiconductor material is deposited over large areas, then complete coverage is achieved, but conversion to single-crystal phase becomes difficult over extended distances
Solution Approach 1:
The patent segments the amorphous-to-single-crystal conversion process into multiple stages using intermediate layers. Each segment maintains manufacturing precision by providing a controlled crystallization interface, enabling complete area coverage while preserving high crystal structure quality across the entire structure.
Solution Approach 2:
The patent changes crystal orientation parameters through intermediate layers to enable reliable phase conversion over large areas. By adjusting the crystallographic parameters of intermediate layers, the process maintains manufacturing precision and single-crystal quality across extended coverage areas that would be impossible with conventional direct conversion methods.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves seamless single-crystal semiconductor layers with extended lateral growth, exceeding conventional limits, suitable for advanced semiconductor device structures like electro-optical modulators.
Implementation Method 1
Solid-phase epitaxy refers to the type of growth when a semiconductor material undergoes a transition from an amorphous phase to a single-crystal phase
Implementation Method 2
the material is deposited in the amorphous phase on a single-crystal substrate, which has a crystal structure that serves as a template for crystallization during the transition to the single-crystal phase
Implementation Method 3
Lateral solid-phase epitaxy involves the formation of an epitaxial semiconductor material over a dielectric layer
Data Source
AI summary
Structures that include a semiconductor layer formed by lateral epitaxial growth and methods of forming such structures. The structure comprises a first semiconductor layer including a first section and a second section adjacent to the first section, a second semiconductor layer including a section and a semiconductor region that projects from the second section of the first semiconductor layer to the section of the second semiconductor layer, and a dielectric layer disposed between the first section of the first semiconductor layer and the section of the second semiconductor layer. The section and the semiconductor region of the second semiconductor layer comprise one or more single-crystal semiconductor materials.