From Solid State TRIZ Cases

Amorphous semiconductor deposited beyond dielectric edges enables lateral solid-phase epitaxy to form longer single-crystal layers with fewer defects.

A projecting semiconductor region enables lateral solid-phase epitaxy across a dielectric, extending single-crystal growth beyond conventional limits.

Flat single-crystal LiMPO4 cathode particles are angled to the current collector to speed lithium-ion diffusion, cut resistance, and raise discharge capacity.

Two-stage laser irradiation turns amorphous silicon into a high-mobility crystallized film with reduced semiconductor variation.

Orienting flat single-crystal LiMPO4 particles with the b-axis across the current collector reduces internal resistance and improves discharge capacity.

Layered perovskite dielectric with metal salts withstands reductive sintering while preserving high permittivity and stable capacitance.

A SiC wafer separation method using laser-induced modified portions and ultrasonic vibration to extract wafers from single crystal ingots.

A moldable nanocomposite shapes ceramic materials into predetermined forms using an organic binder and phase-forming agent.

Pulsed laser heating crystallizes nano-scale particles in thin films while keeping the substrate cool, avoiding thermal damage to low-melting-point materials.

Oxygen atmosphere prevents gallium oxide evaporation and iridium crucible degradation during GAGG scintillator production.