Amorphous semiconductor deposited beyond dielectric edges enables lateral solid-phase epitaxy to form longer single-crystal layers with fewer defects.
A projecting semiconductor region enables lateral solid-phase epitaxy across a dielectric, extending single-crystal growth beyond conventional limits.
Flat single-crystal LiMPO4 cathode particles are angled to the current collector to speed lithium-ion diffusion, cut resistance, and raise discharge capacity.