Layered Perovskite Dielectric for Reductive Sintering Stability

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Solution Overview

Problem

In the manufacture of multi-layered ceramic capacitors, reductive sintering processes can lead to structural defects and deterioration of dielectric material properties, affecting the miniaturization, thinning, and large capacity requirements of capacitors.

Innovation Solution

A dielectric material comprising a layered perovskite compound, such as Dion-Jacobson, Aurivillius, or Ruddlesden-Popper phases, is used, combined with a metal salt represented by Formula MaXb, where M is an element from Group 1, 2, or 3, and heat-treated in a reducing atmosphere to prevent oxidation and structural defects.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If reductive sintering is used to prevent oxidation of internal electrodes, then oxidation prevention is achieved, but structural defects occur in the dielectric material

Engineering Contradiction:
Improveoxidation preventionVSAvoidstructural defects
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

A buffer layer comprising at least one of SiO2, Si3N4, or ONO is introduced as an intermediary between the internal electrode and the dielectric material. This buffer layer acts as a protective barrier during reductive sintering, preventing direct interaction between the reducing atmosphere and the dielectric material, thereby preventing structural defects while still allowing oxidation prevention for the internal electrodes.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The buffer layer is formed on the internal electrode before the reductive sintering process. This preliminary action prepares the structure to withstand the reducing atmosphere by providing a protective interface, preventing oxidation of the internal electrode while protecting the dielectric material from structural defects during subsequent sintering.

Inventive Principle:
Principle #10Preliminary action

2Volume of moving object

If capacitor size is reduced for miniaturization, then device dimensions decrease, but dielectric material properties must be improved to maintain capacity

Engineering Contradiction:
Improvecapacitor sizeVSAvoiddielectric properties
Core Design Contradiction:
Volume of moving objectVSReliability

Solution Approach 1:

The invention changes the chemical composition parameters of the dielectric material by incorporating specific metal salts (alkali metal salts, alkaline earth metal salts, or aluminum salts) into the perovskite structure. This parameter change enables the dielectric material to maintain high permittivity and stable physical properties even when miniaturized, allowing capacitor size reduction without sacrificing dielectric performance.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The approach results in a dielectric material with improved structural stability and physical properties, maintaining high permittivity and capacitance across a wide temperature range, enabling miniaturization and increased capacity in capacitors.

Implementation Method 1

a permittivity of the dielectric material may be 200 or greater in a range of about 1 kilohertz (kHz) to about 1 megahertz (MHz)

Methodology Applied
Scientific EffectPermittivity: Dielectric Permittivity

Implementation Method 2

heat-treating the mixture in a reducing atmosphere, wherein the metal salt may be represented by Formula 8

Methodology Applied
Scientific EffectOxidation prevention through reducing atmosphere: Reduction

Data Source

PatentUS11946154B2Dielectric material, device comprising dielectric material, and method of preparing dielectric material
Publication Date: 2024.04.02 SAMSUNG ELECTRONICS CO LTD
  • US11946154B2 patent drawing
  • US11946154B2 patent drawing
  • US11946154B2 patent drawing

AI summary

Provided are a dielectric material, a device including the dielectric material, and a method of preparing the dielectric material, in which the dielectric material may include: a layered perovskite compound, wherein the layered perovskite compound may include at least one selected from a Dion-Jacobson phase, an Aurivillius phase, and a Ruddlesden-Popper phase, a temperature coefficient of capacitance (TCC) of a capacitance at 200° C. with respect to a capacitance at 40° C. may be in a range of about −15 percent (%) to about 15%, and a permittivity of the dielectric material may be 200 or greater in a range of about 1 kilohertz (kHz) to about 1 megahertz (MHz).