Lateral Power Devices with Segmented Drift and Field Plates
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Solution Overview
Problem
Lateral power integrated devices face a trade-off between on-resistance and drain junction breakdown voltage, where improving one characteristic typically degrades the other, limiting their performance in high-voltage applications.
Innovation Solution
The implementation of a lateral power integrated device design featuring alternately arrayed planar and trench insulation field plates, which reduces on-resistance without compromising drain junction breakdown voltage by optimizing the drift region structure and gate electrode layout.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the doping concentration of the drift region is reduced or the drift length is increased to improve the drain junction breakdown voltage, then the breakdown voltage is improved, but the on-resistance increases and current drivability degrades
Solution Approach 1:
The drift region is segmented into multiple regions with different doping concentrations (first drift region with lower doping concentration adjacent to drain junction, second drift region with higher doping concentration adjacent to channel region). This segmentation allows different portions of the drift region to serve different functions: the first region provides high breakdown voltage while the second region provides low on-resistance, resolving the trade-off between these two parameters.
2Loss of energy
If the doping concentration of the drift region is increased or the drift length is decreased to reduce on-resistance and improve current drivability, then the on-resistance is reduced, but the drain junction breakdown voltage is lowered
Solution Approach 1:
Different regions of the drift region are assigned different doping concentrations based on their local functional requirements. The first drift region near the drain junction has lower doping concentration to ensure high breakdown voltage, while the second drift region near the channel has higher doping concentration to reduce on-resistance. This local quality differentiation allows each region to optimize its performance for its specific function.
Data Source
AI summary
A lateral power integrated device includes a source region and a drain region disposed in a semiconductor layer and spaced apart from each other in a first direction, a drift region disposed in the semiconductor layer and surrounding the drain region, a channel region arranged between the source region and the drift region in the first direction, a plurality of planar insulation field plates disposed over the drift region and spaced apart from each other in a second direction, a plurality of trench insulation field plates disposed in the drift region, a gate insulation layer formed over the channel region, and a gate electrode formed over the gate insulation layer. Each of the trench insulation field plates is disposed between the planar insulation field plates in the second direction.