Semiconductor Devices TRIZ Cases

Electrochemical porosification relaxes doped InGaN layers, enabling high-indium red pixel growth without thermal stress cracks.

A normally-off GaN MOSFET uses ion implantation and a low-density field reducing layer to form ohmic contacts.

Curved second p+-type base regions mitigate electric field concentration to increase avalanche breakdown voltage.

A power semiconductor device uses a non-uniform gate work function profile to locally adjust threshold voltage along the channel region.

A micro light-emitting device uses a periphery area with reduced conductivity to direct current flow within the epitaxial unit.

An optoelectronic semiconductor device uses an edge field generating device to regulate charge carrier flow in the active zone edge region.

A sacrificial nitride layer protects the inter-layer dielectric during tungsten chemical mechanical polishing to control gate height.

Recessing the gate electrode in an IGBT trench lowers parasitic capacitance, resolving switching deterioration caused by high cell density.

Modified polyhedral polysiloxane composition with aryl groups resolves gas-barrier trade-offs, reducing water vapor permeation to enhance LED durability.

Local quality resolves the on-resistance reliability trade-off by relaxing the electric field without constricting the current path.

Segmenting the AlGaN barrier into layers with distinct aluminum compositions raises the threshold voltage above 1 V while maintaining low on-state resistance.

A semiconductor light emitting device uses a depth-oriented inverted pyramid structure to expand the effective light emission area without increasing the planar footprint.

Controlling in-plane FWHM dispersion to 30% stabilizes threshold voltage and reduces n-type impurity variation, resolving electric characteristic inconsistency.

A rounded source field plate relaxes electric fields in compound semiconductor devices.

Branching a dummy trench increases interface area to lower on voltage without expanding the device footprint.

Inverse taper angles in the semiconductor structure improve threshold voltage and on-resistance characteristics for nitride devices.

Carbon mold combustion forms insulated cavities to prevent gate shorts between adjacent fins.

A trench gate semiconductor device incorporates a third p+-type region formed by oblique ion implantation to manage channel depletion.

A vertical light emitting device structure distributes current evenly through inverted electrode placement.

A composite MOSFET structure uses segmented gate oxide thicknesses to control threshold voltage and eliminate reverse recovery current.

Ion implantation modifies spacer selectivity for angle-plasma etching, preventing epitaxial mushroom defects during FinFET fabrication.

Segmenting the conversion layer and removing adhesive material resolves heat dissipation bottlenecks while maintaining high efficiency.

Polygonal light emitting elements reduce total internal reflection and mechanical stress through asymmetric facet geometry.

An epitaxial block layer guides uniform epi growth within substrate recesses.

A recess in the protection film anchors a second metal film, preventing detachment caused by thermal expansion mismatch.

Segmented electrodes with insulating grooves redirect side light upward, resolving trade-offs between conductivity and extraction efficiency.

Stepped dielectric cavities form sloped field plates to reduce dynamic on-state resistance and enhance breakdown voltage.

A micro LED light-emitting unit with semiconductor layers contacting the side of the light-emitting layer.

Selective etching thins the channel formation region via substrate projections, reducing sheet resistance without damaging adjacent source and drain regions.

A composite housing with a silicone layer containing TiO2 reflects UV radiation to prevent epoxy yellowing and extend service life.

A nitride semiconductor device uses parallel interfaces with distinct barrier heights to control depletion layer spread and retraction.

A nitride semiconductor device uses asymmetric layer thickness to maintain carrier density at the heterojunction interface.

T-shaped n-side and surrounding p-side electrode extensions distribute current flow across the semiconductor light emitting element.

A P-type semiconductor region forms a potential barrier at the heterojunction interface corner to reduce leakage current.

Dielectric barriers segment III-N devices to block leakage paths, enhancing reliability while managing voltage biases across isolated regions.

N-type equivalent resistance region in trench gate silicon carbide MOSFETs limits saturation current through controlled doping profiles.

A dual-layer LED structure uses a larger, migration-resistant second reflective layer to boost light output intensity.

A vertical GaN-based field effect transistor uses a silicon carbide substrate and AlGaN/GaN heterointerface to achieve high carrier mobility.

Segmenting the drain region creates a gradient doping profile that increases breakdown voltage while lowering specific on-state resistance.

A silicon carbide semiconductor device uses segmented electric field shielding regions to protect the gate insulating film.

Segmented adhesive members create a gap enabling air flow to oxidize black deposits on ultraviolet light-emitting elements.

An oxide layer on UV LED mesa structures reflects light exceeding the critical angle, preventing total internal reflection and boosting extraction efficiency.

A phosphor-converted light-emitting device incorporates a blocking layer to attenuate unwanted electromagnetic radiation outside the target spectrum.

Segmenting the gate into independent electrodes reduces gate leakage while maintaining high power performance in GaN transistors.

A nitride-based semiconductor diode incorporates a recess structure in the barrier layer to deplete the two-dimensional electron system near the anode.

A GaAs IGBT structure uses a doped intermediate layer between substrate and drift region to enable higher switching frequencies.

Forming the gate structure before the super junction eliminates slope-climbing structures and reduces thermal processes that cause impurity diffusion.

Thick, graded barrier layers increase the electric field across the active region, boosting internal quantum efficiency despite complex manufacturing.

Segmenting the drift region with varying doping concentrations alongside alternating field plates resolves the on-resistance versus breakdown voltage trade-off.